|
|
IGBTs N-channel MOSFET
- STGB10NC60KDT4
- STMicroelectronics
-
1:
$1.99
-
2,392En existencias
|
N.º de artículo de Mouser
511-STGB10NC60KDT4
|
STMicroelectronics
|
IGBTs N-channel MOSFET
|
|
2,392En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.857
|
|
|
$0.681
|
|
|
$0.606
|
|
|
$0.597
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
D2PAK-3
|
|
|
|
|
IGBTs PowerMESH" IGBT
- STGP14NC60KD
- STMicroelectronics
-
1:
$1.67
-
1,989En existencias
-
1,000En pedido
|
N.º de artículo de Mouser
511-STGP14NC60KD
|
STMicroelectronics
|
IGBTs PowerMESH" IGBT
|
|
1,989En existencias
1,000En pedido
|
|
|
$1.67
|
|
|
$0.842
|
|
|
$0.675
|
|
|
$0.61
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
|
IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
- STGWA40H65DFB2
- STMicroelectronics
-
1:
$3.89
-
550En existencias
|
N.º de artículo de Mouser
511-STGWA40H65DFB2
|
STMicroelectronics
|
IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
|
|
550En existencias
|
|
|
$3.89
|
|
|
$2.14
|
|
|
$1.50
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
- STL16N65M2
- STMicroelectronics
-
1:
$3.03
-
1,440En existencias
|
N.º de artículo de Mouser
511-STL16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
|
|
1,440En existencias
|
|
|
$3.03
|
|
|
$1.97
|
|
|
$1.36
|
|
|
$1.14
|
|
|
$1.13
|
|
|
$1.04
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-HV-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 72 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 H
- STL52N60DM6
- STMicroelectronics
-
1:
$7.10
-
1,501En existencias
|
N.º de artículo de Mouser
511-STL52N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 72 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 H
|
|
1,501En existencias
|
|
|
$7.10
|
|
|
$5.05
|
|
|
$3.84
|
|
|
$3.40
|
|
|
$3.15
|
|
|
$3.00
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.56Ohm 7.5A MDmesh M2
- STP10N60M2
- STMicroelectronics
-
1:
$1.60
-
1,774En existencias
|
N.º de artículo de Mouser
511-STP10N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.56Ohm 7.5A MDmesh M2
|
|
1,774En existencias
|
|
|
$1.60
|
|
|
$0.925
|
|
|
$0.873
|
|
|
$0.617
|
|
|
$0.598
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-220 package
- STP24N60M6
- STMicroelectronics
-
1:
$2.79
-
792En existencias
|
N.º de artículo de Mouser
511-STP24N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
792En existencias
|
|
|
$2.79
|
|
|
$1.60
|
|
|
$1.45
|
|
|
$1.17
|
|
|
$1.15
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel 40 V, 0.0125 Ohm typ., 10 A STripFET F6 Power MOSFET in a SO-8 package
- STS10P4LLF6
- STMicroelectronics
-
1:
$1.64
-
2,750En existencias
|
N.º de artículo de Mouser
511-STS10P4LLF6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel 40 V, 0.0125 Ohm typ., 10 A STripFET F6 Power MOSFET in a SO-8 package
|
|
2,750En existencias
|
|
|
$1.64
|
|
|
$1.04
|
|
|
$0.695
|
|
|
$0.547
|
|
|
$0.50
|
|
|
$0.457
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
SOIC-8
|
P-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
- STW28N65M2
- STMicroelectronics
-
1:
$4.88
-
709En existencias
|
N.º de artículo de Mouser
511-STW28N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
|
|
709En existencias
|
|
|
$4.88
|
|
|
$2.73
|
|
|
$1.99
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long lea
- STWA75N65DM6
- STMicroelectronics
-
1:
$14.10
-
398En existencias
|
N.º de artículo de Mouser
511-STWA75N65DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long lea
|
|
398En existencias
|
|
|
$14.10
|
|
|
$11.33
|
|
|
$8.97
|
|
|
$8.74
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
|
N-Channel
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) PNP Gen Pur Switch
- MJD350T4
- STMicroelectronics
-
1:
$1.12
-
4,715En existencias
|
N.º de artículo de Mouser
511-MJD350T4
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) PNP Gen Pur Switch
|
|
4,715En existencias
|
|
|
$1.12
|
|
|
$0.702
|
|
|
$0.461
|
|
|
$0.357
|
|
|
$0.27
|
|
|
Ver
|
|
|
$0.323
|
|
|
$0.252
|
|
|
$0.235
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
TO-252-3
|
PNP
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.092Ohm 29A MDMesh II MOS
- STB34NM60N
- STMicroelectronics
-
1:
$10.55
-
970En existencias
|
N.º de artículo de Mouser
511-STB34NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.092Ohm 29A MDMesh II MOS
|
|
970En existencias
|
|
|
$10.55
|
|
|
$7.36
|
|
|
$6.12
|
|
|
$6.11
|
|
|
$5.72
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 450V-4.1ohms 1.5A
- STD2NC45-1
- STMicroelectronics
-
1:
$0.49
-
5,394En existencias
|
N.º de artículo de Mouser
511-STD2NC45-1
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 450V-4.1ohms 1.5A
|
|
5,394En existencias
|
|
|
$0.49
|
|
|
$0.482
|
|
|
$0.478
|
|
|
$0.426
|
|
|
Ver
|
|
|
$0.376
|
|
|
$0.267
|
|
|
$0.262
|
|
|
$0.257
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 525 V 4.4 A SuperMESH3
- STD5N52K3
- STMicroelectronics
-
1:
$1.87
-
1,401En existencias
|
N.º de artículo de Mouser
511-STD5N52K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 525 V 4.4 A SuperMESH3
|
|
1,401En existencias
|
|
|
$1.87
|
|
|
$1.19
|
|
|
$0.803
|
|
|
$0.636
|
|
|
$0.588
|
|
|
$0.541
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
- STF11NM50N
- STMicroelectronics
-
1:
$1.86
-
808En existencias
|
N.º de artículo de Mouser
511-STF11NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
|
|
808En existencias
|
|
|
$1.86
|
|
|
$1.51
|
|
|
$1.45
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220FP package
- STF12N60M2
- STMicroelectronics
-
1:
$1.93
-
2,071En existencias
|
N.º de artículo de Mouser
511-STF12N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220FP package
|
|
2,071En existencias
|
|
|
$1.93
|
|
|
$0.927
|
|
|
$0.826
|
|
|
$0.658
|
|
|
$0.538
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
- STF24N60DM2
- STMicroelectronics
-
1:
$3.27
-
1,166En existencias
|
N.º de artículo de Mouser
511-STF24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
|
|
1,166En existencias
|
|
|
$3.27
|
|
|
$1.78
|
|
|
$1.57
|
|
|
$1.38
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
- STF28N60M2
- STMicroelectronics
-
1:
$3.66
-
782En existencias
|
N.º de artículo de Mouser
511-STF28N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
|
|
782En existencias
|
|
|
$3.66
|
|
|
$1.79
|
|
|
$1.64
|
|
|
$1.47
|
|
|
$1.41
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.72Ohm 5.5A MDMesh M2
- STF9N60M2
- STMicroelectronics
-
1:
$1.98
-
1,816En existencias
|
N.º de artículo de Mouser
511-STF9N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.72Ohm 5.5A MDMesh M2
|
|
1,816En existencias
|
|
|
$1.98
|
|
|
$0.89
|
|
|
$0.699
|
|
|
$0.618
|
|
|
Ver
|
|
|
$0.581
|
|
|
$0.571
|
|
|
$0.555
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
IGBTs 2A 6V SHORT CIRCUIT RUGGED IGBT
- STGF19NC60KD
- STMicroelectronics
-
1:
$2.36
-
1,600En existencias
|
N.º de artículo de Mouser
511-STGF19NC60KD
|
STMicroelectronics
|
IGBTs 2A 6V SHORT CIRCUIT RUGGED IGBT
|
|
1,600En existencias
|
|
|
$2.36
|
|
|
$1.15
|
|
|
$1.04
|
|
|
$0.947
|
|
|
Ver
|
|
|
$0.839
|
|
|
$0.753
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220FP-3
|
|
|
|
|
Módulos IGBT SLLIMM 2nd series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBTs
- STGIB8CH60TS-L
- STMicroelectronics
-
1:
$13.53
-
105En existencias
|
N.º de artículo de Mouser
511-STGIB8CH60TS-L
|
STMicroelectronics
|
Módulos IGBT SLLIMM 2nd series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBTs
|
|
105En existencias
|
|
|
$13.53
|
|
|
$9.47
|
|
|
$7.81
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
SDIP2B-26
|
|
|
|
|
Módulos IGBT SLLIMM nano IPM, 3 A, 600 V, 3-phase inverter bridge IGBT
- STGIPN3H60AT
- STMicroelectronics
-
1:
$7.93
-
357En existencias
|
N.º de artículo de Mouser
511-STGIPN3H60AT
|
STMicroelectronics
|
Módulos IGBT SLLIMM nano IPM, 3 A, 600 V, 3-phase inverter bridge IGBT
|
|
357En existencias
|
|
|
$7.93
|
|
|
$5.22
|
|
|
$4.14
|
|
|
$4.00
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
NDIP-26
|
|
|
|
|
IGBTs Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
- STGWA15M120DF3
- STMicroelectronics
-
1:
$5.15
-
467En existencias
|
N.º de artículo de Mouser
511-STGWA15M120DF3
|
STMicroelectronics
|
IGBTs Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
|
|
467En existencias
|
|
|
$5.15
|
|
|
$3.42
|
|
|
$2.72
|
|
|
$2.14
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8
- STL33N60M2
- STMicroelectronics
-
1:
$4.97
-
1,617En existencias
|
N.º de artículo de Mouser
511-STL33N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8
|
|
1,617En existencias
|
|
|
$4.97
|
|
|
$4.75
|
|
|
$3.72
|
|
|
$3.31
|
|
|
$2.83
|
|
|
$1.95
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 14A Mosfet Mdmesh II Power
- STP19NM50N
- STMicroelectronics
-
1:
$3.68
-
644En existencias
|
N.º de artículo de Mouser
511-STP19NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 14A Mosfet Mdmesh II Power
|
|
644En existencias
|
|
|
$3.68
|
|
|
$2.33
|
|
|
$2.20
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|