|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.160 Ohm 19A HV Mdmesh II
- STL26NM60N
- STMicroelectronics
-
1:
$5.02
-
2,119En existencias
|
N.º de artículo de Mouser
511-STL26NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.160 Ohm 19A HV Mdmesh II
|
|
2,119En existencias
|
|
|
$5.02
|
|
|
$4.02
|
|
|
$2.91
|
|
|
$2.88
|
|
|
$2.58
|
|
|
$2.56
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-HV-5
|
N-Channel
|
|
|
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
$9.56
-
37En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT040TO65G3
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37En existencias
|
|
|
$9.56
|
|
|
$7.22
|
|
|
$5.36
|
|
|
$5.00
|
|
|
$5.00
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
$2.41
-
1,003En existencias
-
1,000En pedido
-
Nuevo producto
|
N.º de artículo de Mouser
511-STF80N1K1K6
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
1,003En existencias
1,000En pedido
|
|
|
$2.41
|
|
|
$1.18
|
|
|
$1.05
|
|
|
$0.844
|
|
|
$0.774
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STF80N600K6
- STMicroelectronics
-
1:
$3.21
-
1,043En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STF80N600K6
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
1,043En existencias
|
|
|
$3.21
|
|
|
$1.61
|
|
|
$1.58
|
|
|
$1.32
|
|
|
$1.16
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGHU30M65DF2AG
- STMicroelectronics
-
1:
$4.43
-
540En existencias
-
600En pedido
-
Nuevo producto
|
N.º de artículo de Mouser
511-STGHU30M65DF2AG
Nuevo producto
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540En existencias
600En pedido
|
|
|
$4.43
|
|
|
$2.94
|
|
|
$2.08
|
|
|
$1.79
|
|
Min.: 1
Mult.: 1
:
600
|
|
IGBTs
|
Si
|
SMD/SMT
|
HU3PAK-7
|
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
$4.19
-
766En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STGWA30M65DF2AG
Nuevo producto
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
766En existencias
|
|
|
$4.19
|
|
|
$2.82
|
|
|
$2.09
|
|
|
$1.86
|
|
|
$1.65
|
|
Min.: 1
Mult.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
- STK615N4F8AG
- STMicroelectronics
-
1:
$4.83
-
496En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STK615N4F8AG
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
|
|
496En existencias
|
|
|
$4.83
|
|
|
$3.21
|
|
|
$2.28
|
|
|
$2.15
|
|
|
$2.03
|
|
|
$2.00
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
MOSFETs
|
|
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
$2.10
-
910En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STL160N6LF7
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
910En existencias
|
|
|
$2.10
|
|
|
$1.34
|
|
|
$0.908
|
|
|
$0.722
|
|
|
$0.673
|
|
|
$0.64
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
MOSFETs
|
|
|
|
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
$92.58
-
144En existencias
|
N.º de artículo de Mouser
511-2N2222AUB1
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
144En existencias
|
|
|
$92.58
|
|
|
$86.95
|
|
|
$75.37
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
$111.64
-
21En existencias
|
N.º de artículo de Mouser
511-2N2907AUB1
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21En existencias
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) Rad-Hard 80 V, 5 A NPN transistor - Engineering model
- 2N5154S1
- STMicroelectronics
-
1:
$234.23
-
27En existencias
|
N.º de artículo de Mouser
511-2N5154S1
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) Rad-Hard 80 V, 5 A NPN transistor - Engineering model
|
|
27En existencias
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SMD.5
|
NPN
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
$6.66
-
560En existencias
|
N.º de artículo de Mouser
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
560En existencias
|
|
|
$6.66
|
|
|
$3.31
|
|
|
$3.30
|
|
|
$3.28
|
|
|
$3.14
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
$20.55
-
139En existencias
|
N.º de artículo de Mouser
511-SCT012H90G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
139En existencias
|
|
|
$20.55
|
|
|
$14.76
|
|
|
$14.34
|
|
|
$13.39
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
$15.48
-
172En existencias
|
N.º de artículo de Mouser
511-SCT018H65G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
172En existencias
|
|
|
$15.48
|
|
|
$10.93
|
|
|
$10.52
|
|
|
$9.96
|
|
|
$9.30
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
$15.62
-
532En existencias
|
N.º de artículo de Mouser
511-SCT018W65G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532En existencias
|
|
|
$15.62
|
|
|
$11.03
|
|
|
$9.40
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
$18.90
-
488En existencias
|
N.º de artículo de Mouser
511-SCT020W120G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
488En existencias
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
$19.33
-
590En existencias
|
N.º de artículo de Mouser
511-SCT025W120G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
590En existencias
|
|
|
$19.33
|
|
|
$12.92
|
|
|
$11.90
|
|
|
$11.13
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
$18.07
-
462En existencias
|
N.º de artículo de Mouser
511-SCT025W120G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
462En existencias
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
$16.28
-
338En existencias
|
N.º de artículo de Mouser
511-SCT027W65G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338En existencias
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
$13.15
-
611En existencias
|
N.º de artículo de Mouser
511-SCT040W120G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
611En existencias
|
|
|
$13.15
|
|
|
$9.19
|
|
|
$7.52
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
$13.05
-
587En existencias
|
N.º de artículo de Mouser
511-SCT040W120G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
587En existencias
|
|
|
$13.05
|
|
|
$9.12
|
|
|
$7.45
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
$10.58
-
537En existencias
-
600En pedido
|
N.º de artículo de Mouser
511-SCT040W65G3-4
|
STMicroelectronics
|
MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
537En existencias
600En pedido
|
|
|
$10.58
|
|
|
$6.48
|
|
|
$6.16
|
|
|
$5.87
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
$12.54
-
638En existencias
|
N.º de artículo de Mouser
511-SCT040W65G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
638En existencias
|
|
|
$12.54
|
|
|
$9.15
|
|
|
$7.43
|
|
|
$7.42
|
|
|
$7.07
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
$12.64
-
303En existencias
|
N.º de artículo de Mouser
511-SCT070W120G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
303En existencias
|
|
|
$12.64
|
|
|
$10.41
|
|
|
$7.99
|
|
|
$7.14
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
$25.10
-
187En existencias
-
200En pedido
|
N.º de artículo de Mouser
511-SH63N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
187En existencias
200En pedido
|
|
|
$25.10
|
|
|
$19.29
|
|
|
$12.60
|
|
|
$12.60
|
|
|
$12.00
|
|
Min.: 1
Mult.: 1
:
200
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|
