STMicroelectronics Transistores

Resultados: 1,938
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Tipo de producto Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor
STMicroelectronics IGBTs N-CHANNEL MFT
600En pedido
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 452En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 600V 40A trench gate field-stop IGBT 98En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 600V 40A trench gate field-stop IGBT 1,114En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss 394En existencias
600En pedido
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 600V 40A High Speed Trench Gate IGBT 870En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247
STMicroelectronics IGBTs 600V 60A High Speed Trench Gate IGBT 512En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247
STMicroelectronics IGBTs 600V 60A Trench Gate 1.8V Vce IGBT 258En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss 343En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 19A 600V Very Fast IGBT Ultrafast Diode 336En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l 911En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long 402En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT 387En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long 495En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss 158En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3


STMicroelectronics IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long 228En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole

STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed 601En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT 464En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBTs 1250V 20A trench gte field-stop IGBT 613En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGBT 287En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBTs Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT in a Max247 long l 173En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole MAX257-3
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET 227En existencias
Min.: 1
Mult.: 1
: 1,000

MOSFETs Si SMD/SMT H2PAK-2 N-Channel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 pac 61En existencias
Min.: 1
Mult.: 1
: 1,000

MOSFETs Si SMD/SMT H2PAK-2 N-Channel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 p 374En existencias
Min.: 1
Mult.: 1
: 1,000

MOSFETs Si SMD/SMT N-Channel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET i 87En existencias
Min.: 1
Mult.: 1
: 1,000

MOSFETs Si SMD/SMT H2PAK-2 N-Channel