|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IAUC120N06S5N022ATMA1
- Infineon Technologies
-
1:
$2.60
-
571En existencias
-
4,900En pedido
|
N.º de artículo de Mouser
726-IAUC120N06S5N022
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
571En existencias
4,900En pedido
|
|
|
$2.60
|
|
|
$1.67
|
|
|
$1.14
|
|
|
$0.907
|
|
|
Ver
|
|
|
$0.734
|
|
|
$0.801
|
|
|
$0.757
|
|
|
$0.734
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
170 A
|
2.24 mOhms
|
- 20 V, 20 V
|
2.8 V
|
68 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPTG039N15NM5ATMA1
- Infineon Technologies
-
1:
$6.32
-
2,482En existencias
|
N.º de artículo de Mouser
726-TG039N15NM5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
2,482En existencias
|
|
|
$6.32
|
|
|
$4.49
|
|
|
$3.30
|
|
|
$3.29
|
|
|
$3.11
|
|
|
$3.08
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HSOG-8
|
N-Channel
|
1 Channel
|
150 V
|
190 A
|
3.9 mOhms
|
- 20 V, 20 V
|
3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
319 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 71A TDSON-8 OptiMOS 2
- BSC118N10NS G
- Infineon Technologies
-
1:
$1.99
-
4,333En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC118N10NSG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 71A TDSON-8 OptiMOS 2
|
|
4,333En existencias
|
|
|
$1.99
|
|
|
$1.26
|
|
|
$0.855
|
|
|
$0.679
|
|
|
Ver
|
|
|
$0.594
|
|
|
$0.625
|
|
|
$0.602
|
|
|
$0.594
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
11 A
|
11.8 mOhms
|
- 20 V, 20 V
|
4 V
|
56 nC
|
- 55 C
|
+ 150 C
|
114 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 120A D2PAK-2 OptiMOS 3
- IPB020NE7N3 G
- Infineon Technologies
-
1:
$5.92
-
1,971En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPB020NE7N3GXT
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 120A D2PAK-2 OptiMOS 3
|
|
1,971En existencias
|
|
|
$5.92
|
|
|
$4.22
|
|
|
$3.05
|
|
|
$3.04
|
|
|
$2.85
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
75 V
|
120 A
|
2 mOhms
|
- 20 V, 20 V
|
2.3 V
|
155 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPD25CN10NGATMA1
- Infineon Technologies
-
1:
$1.74
-
14,783En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD25CN10NGATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
14,783En existencias
|
|
|
$1.74
|
|
|
$1.11
|
|
|
$0.74
|
|
|
$0.584
|
|
|
$0.533
|
|
|
$0.495
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
35 A
|
19 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IPG20N06S4L14AATMA1
- Infineon Technologies
-
1:
$1.39
-
5,770En existencias
|
N.º de artículo de Mouser
726-20N06S4L14AATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
5,770En existencias
|
|
|
$1.39
|
|
|
$0.993
|
|
|
$0.791
|
|
|
$0.704
|
|
|
Ver
|
|
|
$0.608
|
|
|
$0.624
|
|
|
$0.608
|
|
|
$0.608
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
60 V
|
20 A
|
13.7 mOhms
|
- 16 V, 16 V
|
1.7 V
|
39 nC
|
- 55 C
|
+ 175 C
|
50 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
- BSC010N04LS
- Infineon Technologies
-
1:
$2.43
-
26,743En existencias
|
N.º de artículo de Mouser
726-BSC010N04LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
|
|
26,743En existencias
|
|
|
$2.43
|
|
|
$1.56
|
|
|
$1.06
|
|
|
$0.881
|
|
|
Ver
|
|
|
$0.763
|
|
|
$0.775
|
|
|
$0.763
|
|
|
$0.763
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1 mOhms
|
- 20 V, 20 V
|
1.2 V
|
95 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSZ017NE2LS5IATMA1
- Infineon Technologies
-
1:
$1.92
-
4,407En existencias
|
N.º de artículo de Mouser
726-BSZ017NE2LS5IATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
4,407En existencias
|
|
|
$1.92
|
|
|
$1.23
|
|
|
$0.822
|
|
|
$0.651
|
|
|
Ver
|
|
|
$0.544
|
|
|
$0.583
|
|
|
$0.579
|
|
|
$0.544
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
40 A
|
1.9 mOhms
|
- 16 V, 16 V
|
2 V
|
22 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 40A TDSON-8 OptiMOS
- BSZ018NE2LS
- Infineon Technologies
-
1:
$1.62
-
6,350En existencias
|
N.º de artículo de Mouser
726-BSZ018NE2LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 40A TDSON-8 OptiMOS
|
|
6,350En existencias
|
|
|
$1.62
|
|
|
$1.03
|
|
|
$0.684
|
|
|
$0.538
|
|
|
Ver
|
|
|
$0.448
|
|
|
$0.479
|
|
|
$0.478
|
|
|
$0.448
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
153 A
|
1.9 mOhms
|
- 20 V, 20 V
|
2 V
|
39 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ021N04LS6ATMA1
- Infineon Technologies
-
1:
$1.34
-
10,250En existencias
|
N.º de artículo de Mouser
726-BSZ021N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
10,250En existencias
|
|
|
$1.34
|
|
|
$1.09
|
|
|
$0.945
|
|
|
$0.864
|
|
|
Ver
|
|
|
$0.696
|
|
|
$0.722
|
|
|
$0.696
|
|
|
$0.696
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
2.4 mOhms
|
- 20 V, 20 V
|
2.3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
83 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3
- BSZ050N03LS G
- Infineon Technologies
-
1:
$1.03
-
6,251En existencias
|
N.º de artículo de Mouser
726-BSZ050N03LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3
|
|
6,251En existencias
|
|
|
$1.03
|
|
|
$0.638
|
|
|
$0.416
|
|
|
$0.32
|
|
|
Ver
|
|
|
$0.232
|
|
|
$0.29
|
|
|
$0.269
|
|
|
$0.232
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
40 A
|
6.2 mOhms
|
- 20 V, 20 V
|
2.2 V
|
26 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3M
- BSZ050N03MS G
- Infineon Technologies
-
1:
$0.96
-
7,148En existencias
|
N.º de artículo de Mouser
726-BSZ050N03MSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3M
|
|
7,148En existencias
|
|
|
$0.96
|
|
|
$0.598
|
|
|
$0.39
|
|
|
$0.30
|
|
|
Ver
|
|
|
$0.218
|
|
|
$0.256
|
|
|
$0.247
|
|
|
$0.218
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
80 A
|
4.6 mOhms
|
- 20 V, 20 V
|
2 V
|
34 nC
|
- 55 C
|
+ 150 C
|
48 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
- BSZ084N08NS5ATMA1
- Infineon Technologies
-
1:
$2.11
-
10,772En existencias
|
N.º de artículo de Mouser
726-BSZ084N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
|
|
10,772En existencias
|
|
|
$2.11
|
|
|
$1.31
|
|
|
$0.887
|
|
|
$0.705
|
|
|
Ver
|
|
|
$0.622
|
|
|
$0.654
|
|
|
$0.622
|
|
|
$0.622
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
40 A
|
11.9 mOhms
|
- 20 V, 20 V
|
2.2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IAUC41N06S5L100ATMA1
- Infineon Technologies
-
1:
$1.30
-
14,713En existencias
|
N.º de artículo de Mouser
726-IAUC41N06S5L100A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
14,713En existencias
|
|
|
$1.30
|
|
|
$0.817
|
|
|
$0.54
|
|
|
$0.421
|
|
|
Ver
|
|
|
$0.33
|
|
|
$0.354
|
|
|
$0.353
|
|
|
$0.33
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8-3
|
N-Channel
|
1 Channel
|
60 V
|
41 A
|
10 mOhms
|
- 16 V, 16 V
|
1.7 V
|
12.7 nC
|
- 55 C
|
+ 175 C
|
42 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 50A DPAK-2 OptiMOS 3
- IPD050N03LGATMA1
- Infineon Technologies
-
1:
$1.42
-
4,968En existencias
|
N.º de artículo de Mouser
726-IPD050N03LGATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 50A DPAK-2 OptiMOS 3
|
|
4,968En existencias
|
|
|
$1.42
|
|
|
$0.674
|
|
|
$0.516
|
|
|
$0.438
|
|
|
$0.374
|
|
|
$0.373
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
50 A
|
4.2 mOhms
|
- 20 V, 20 V
|
1 V
|
31 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A TO220-3 OptiMOS 3
- IPP111N15N3 G
- Infineon Technologies
-
1:
$4.57
-
864En existencias
|
N.º de artículo de Mouser
726-IPP111N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A TO220-3 OptiMOS 3
|
|
864En existencias
|
|
|
$4.57
|
|
|
$3.05
|
|
|
$2.35
|
|
|
$2.05
|
|
|
$1.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
150 V
|
83 A
|
9.4 mOhms
|
- 20 V, 20 V
|
2 V
|
55 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
OptiMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 40A TISON-8
- BSC0911NDATMA1
- Infineon Technologies
-
1:
$2.30
-
6,108En existencias
|
N.º de artículo de Mouser
726-SP000934746
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 40A TISON-8
|
|
6,108En existencias
|
|
|
$2.30
|
|
|
$1.47
|
|
|
$1.01
|
|
|
$0.80
|
|
|
Ver
|
|
|
$0.726
|
|
|
$0.738
|
|
|
$0.726
|
|
|
$0.726
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TISON-8
|
N-Channel
|
2 Channel
|
25 V
|
40 A
|
3.7 mOhms, 1.3 mOhms
|
- 20 V, 20 V
|
1.6 V
|
3 nC, 8.8 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 30A DPAK-2 OptiMOS-T
- IPD30N10S3L-34
- Infineon Technologies
-
1:
$1.99
-
3,124En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD30N10S3L34
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 30A DPAK-2 OptiMOS-T
|
|
3,124En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.878
|
|
|
$0.744
|
|
|
$0.644
|
|
|
$0.592
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
30 A
|
31 mOhms
|
- 20 V, 20 V
|
1.2 V
|
24 nC
|
- 55 C
|
+ 175 C
|
57 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSC0502NSIATMA1
- Infineon Technologies
-
1:
$1.57
-
9,968En existencias
|
N.º de artículo de Mouser
726-BSC0502NSIATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
9,968En existencias
|
|
|
$1.57
|
|
|
$1.02
|
|
|
$0.661
|
|
|
$0.52
|
|
|
$0.459
|
|
|
$0.429
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2 V
|
26 nC
|
- 55 C
|
+ 150 C
|
43 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
- BSC0902NSI
- Infineon Technologies
-
1:
$1.21
-
9,541En existencias
|
N.º de artículo de Mouser
726-BSC0902NSI
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
|
|
9,541En existencias
|
|
|
$1.21
|
|
|
$0.546
|
|
|
$0.421
|
|
|
$0.367
|
|
|
Ver
|
|
|
$0.299
|
|
|
$0.322
|
|
|
$0.321
|
|
|
$0.299
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.2 mOhms
|
- 20 V, 20 V
|
2 V
|
16.2 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V,30V 40A,40A TISON-8
- BSC0923NDI
- Infineon Technologies
-
1:
$1.62
-
4,583En existencias
|
N.º de artículo de Mouser
726-BSC0923NDI
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V,30V 40A,40A TISON-8
|
|
4,583En existencias
|
|
|
$1.62
|
|
|
$1.03
|
|
|
$0.684
|
|
|
$0.538
|
|
|
Ver
|
|
|
$0.448
|
|
|
$0.479
|
|
|
$0.454
|
|
|
$0.448
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TISON-8
|
N-Channel
|
2 Channel
|
30 V
|
40 A
|
3.8 mOhms, 2.1 mOhms
|
- 20 V, 20 V
|
1.2 V
|
10 nC, 18.4 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSZ0503NSIATMA1
- Infineon Technologies
-
1:
$1.26
-
9,366En existencias
|
N.º de artículo de Mouser
726-BSZ0503NSIATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
9,366En existencias
|
|
|
$1.26
|
|
|
$0.79
|
|
|
$0.523
|
|
|
$0.413
|
|
|
Ver
|
|
|
$0.324
|
|
|
$0.346
|
|
|
$0.34
|
|
|
$0.324
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
82 A
|
3.5 mOhms
|
- 20 V, 20 V
|
2 V
|
15 nC
|
- 55 C
|
+ 150 C
|
36 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IAUC120N06S5N017ATMA1
- Infineon Technologies
-
1:
$3.11
-
3,859En existencias
|
N.º de artículo de Mouser
726-IAUC120N06S5N017
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
3,859En existencias
|
|
|
$3.11
|
|
|
$2.01
|
|
|
$1.40
|
|
|
$1.18
|
|
|
$1.10
|
|
|
$1.10
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8-43
|
N-Channel
|
1 Channel
|
60 V
|
120 A
|
1.6 mOhms
|
- 20 V, 20 V
|
2.8 V
|
73.7 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V,40V)
- IPC70N04S5L4R2ATMA1
- Infineon Technologies
-
1:
$1.37
-
9,700En existencias
|
N.º de artículo de Mouser
726-IPC70N04S5L4R2AT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V,40V)
|
|
9,700En existencias
|
|
|
$1.37
|
|
|
$0.861
|
|
|
$0.57
|
|
|
$0.445
|
|
|
Ver
|
|
|
$0.355
|
|
|
$0.38
|
|
|
$0.373
|
|
|
$0.355
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
70 A
|
3.4 mOhms
|
- 16 V, 16 V
|
1.2 V
|
30 nC
|
- 55 C
|
+ 175 C
|
50 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55V 20A TDSON-8 OptiMOS
- IPG20N06S2L-50
- Infineon Technologies
-
1:
$1.71
-
2,981En existencias
|
N.º de artículo de Mouser
726-IPG20N06S2L-50
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55V 20A TDSON-8 OptiMOS
|
|
2,981En existencias
|
|
|
$1.71
|
|
|
$1.10
|
|
|
$0.727
|
|
|
$0.573
|
|
|
Ver
|
|
|
$0.484
|
|
|
$0.518
|
|
|
$0.491
|
|
|
$0.484
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
55 V
|
20 A
|
50 mOhms
|
- 20 V, 20 V
|
1.6 V
|
17 nC
|
- 55 C
|
+ 175 C
|
51 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|