|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 71A TDSON-8 OptiMOS 2
- BSC118N10NS G
- Infineon Technologies
-
1:
$1.99
-
4,333En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC118N10NSG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 71A TDSON-8 OptiMOS 2
|
|
4,333En existencias
|
|
|
$1.99
|
|
|
$1.29
|
|
|
$0.855
|
|
|
$0.679
|
|
|
Ver
|
|
|
$0.519
|
|
|
$0.625
|
|
|
$0.602
|
|
|
$0.519
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
11 A
|
11.8 mOhms
|
- 20 V, 20 V
|
4 V
|
56 nC
|
- 55 C
|
+ 150 C
|
114 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPD25CN10NGATMA1
- Infineon Technologies
-
1:
$1.74
-
14,033En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD25CN10NGATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
14,033En existencias
|
|
|
$1.74
|
|
|
$1.11
|
|
|
$0.74
|
|
|
$0.584
|
|
|
$0.45
|
|
|
Ver
|
|
|
$0.533
|
|
|
$0.449
|
|
|
$0.432
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
35 A
|
19 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC252N10NSFGATMA1
- Infineon Technologies
-
1:
$1.70
-
23,977En existencias
|
N.º de artículo de Mouser
726-BSC252N10NSFGATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
23,977En existencias
|
|
|
$1.70
|
|
|
$1.09
|
|
|
$0.724
|
|
|
$0.571
|
|
|
$0.422
|
|
|
Ver
|
|
|
$0.515
|
|
|
$0.488
|
|
|
$0.421
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
19.5 mOhms
|
- 20 V, 20 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPD33CN10NGATMA1
- Infineon Technologies
-
1:
$1.55
-
2,143En existencias
|
N.º de artículo de Mouser
726-IPD33CN10NGATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
2,143En existencias
|
|
|
$1.55
|
|
|
$0.581
|
|
|
$0.427
|
|
|
$0.384
|
|
|
$0.382
|
|
|
Ver
|
|
|
$0.383
|
|
|
$0.368
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
27 A
|
25 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 175 C
|
58 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC265N10LSF G
- Infineon Technologies
-
1:
$1.50
-
2,155En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC265N10LSFG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
2,155En existencias
|
|
|
$1.50
|
|
|
$0.946
|
|
|
$0.628
|
|
|
$0.496
|
|
|
$0.394
|
|
|
Ver
|
|
|
$0.447
|
|
|
$0.41
|
|
|
$0.393
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
20 mOhms
|
- 20 V, 20 V
|
1.2 V
|
21 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPD78CN10NGATMA1
- Infineon Technologies
-
1:
$1.21
-
6,764En existencias
|
N.º de artículo de Mouser
726-IPD78CN10NGATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
6,764En existencias
|
|
|
$1.21
|
|
|
$0.663
|
|
|
$0.447
|
|
|
$0.388
|
|
|
$0.293
|
|
|
Ver
|
|
|
$0.35
|
|
|
$0.287
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
13 A
|
78 mOhms
|
- 20 V, 20 V
|
3 V
|
8 nC
|
- 55 C
|
+ 175 C
|
31 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 2
- BSC100N10NSF G
- Infineon Technologies
-
1:
$2.74
-
10,685En existencias
|
N.º de artículo de Mouser
726-BSC100N10NSFG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 2
|
|
10,685En existencias
|
|
|
$2.74
|
|
|
$1.77
|
|
|
$1.22
|
|
|
$0.977
|
|
|
Ver
|
|
|
$0.874
|
|
|
$0.902
|
|
|
$0.901
|
|
|
$0.874
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
90 A
|
10 mOhms
|
- 20 V, 20 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC265N10LSFGATMA1
- Infineon Technologies
-
1:
$1.53
-
4,632En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC265N10LSFGATM
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
4,632En existencias
|
|
|
$1.53
|
|
|
$0.94
|
|
|
$0.641
|
|
|
$0.502
|
|
|
Ver
|
|
|
$0.394
|
|
|
$0.437
|
|
|
$0.435
|
|
|
$0.394
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
20 mOhms
|
- 20 V, 20 V
|
1.2 V
|
21 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC252N10NSF G
- Infineon Technologies
-
1:
$1.75
-
349En existencias
|
N.º de artículo de Mouser
726-BSC252N10NSFG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
349En existencias
|
|
|
$1.75
|
|
|
$1.11
|
|
|
$0.739
|
|
|
$0.606
|
|
|
Ver
|
|
|
$0.482
|
|
|
$0.531
|
|
|
$0.515
|
|
|
$0.482
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
19.5 mOhms
|
- 20 V, 20 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 29A DPAK-2
- IPD350N06L G
- Infineon Technologies
-
1:
$1.03
-
-
NRND
|
N.º de artículo de Mouser
726-IPD350N06LG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 29A DPAK-2
|
|
|
|
|
$1.03
|
|
|
$0.658
|
|
|
$0.447
|
|
|
$0.34
|
|
|
$0.273
|
|
|
Ver
|
|
|
$0.338
|
|
|
$0.269
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
29 A
|
35 mOhms
|
- 20 V, 20 V
|
1.2 V
|
10 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|