|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
- SH68N65DM6AG
- STMicroelectronics
-
1:
$19.06
-
185En existencias
|
N.º de artículo de Mouser
511-SH68N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
|
|
185En existencias
|
|
|
$19.06
|
|
|
$13.62
|
|
|
$12.15
|
|
|
$12.15
|
|
Min.: 1
Mult.: 1
:
200
|
|
|
Si
|
|
|
N-Channel
|
|
650 V
|
64 A
|
35 mOhms
|
|
|
|
|
|
|
|
AQG 324
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET
- STD80N340K6
- STMicroelectronics
-
1:
$4.31
-
2,525En existencias
|
N.º de artículo de Mouser
511-STD80N340K6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET
|
|
2,525En existencias
|
|
|
$4.31
|
|
|
$2.84
|
|
|
$2.01
|
|
|
$1.84
|
|
|
$1.72
|
|
|
$1.72
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
12 A
|
340 mOhms
|
- 10 V, 10 V
|
3 V
|
17.8 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
- STH12N120K5-2AG
- STMicroelectronics
-
1:
$12.01
-
461En existencias
|
N.º de artículo de Mouser
511-STH12N120K5-2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
|
|
461En existencias
|
|
|
$12.01
|
|
|
$9.73
|
|
|
$8.11
|
|
|
$7.37
|
|
|
$6.75
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
1.2 kV
|
7 A
|
1.9 Ohms
|
- 30 V, 30 V
|
5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET
- STH60N099DM9-2AG
- STMicroelectronics
-
1:
$5.83
-
2,142En existencias
|
N.º de artículo de Mouser
511-STH60N099DM9-2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET
|
|
2,142En existencias
|
|
|
$5.83
|
|
|
$3.91
|
|
|
$2.82
|
|
|
$2.77
|
|
|
$2.58
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
600 V
|
27 A
|
99 mOhms
|
- 30 V, 30 V
|
4.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
179 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement Mode Standard Level 100V, 4.6mohm max, 125A STripFET F8
- STL120N10F8
- STMicroelectronics
-
1:
$2.59
-
4,720En existencias
-
3,000En pedido
|
N.º de artículo de Mouser
511-STL120N10F8
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement Mode Standard Level 100V, 4.6mohm max, 125A STripFET F8
|
|
4,720En existencias
3,000En pedido
|
|
|
$2.59
|
|
|
$1.67
|
|
|
$1.15
|
|
|
$0.92
|
|
|
$0.918
|
|
|
$0.858
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
100 V
|
125 A
|
4.6 mOhms
|
- 20 V, 20 V
|
2 V
|
56 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement Mode 100V, 3.2mOhm max, 158A STripFET F8 Power MOSFET
- STL160N10F8
- STMicroelectronics
-
1:
$3.26
-
2,835En existencias
|
N.º de artículo de Mouser
511-STL160N10F8
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement Mode 100V, 3.2mOhm max, 158A STripFET F8 Power MOSFET
|
|
2,835En existencias
|
|
|
$3.26
|
|
|
$2.12
|
|
|
$1.63
|
|
|
$1.36
|
|
|
$1.18
|
|
|
$1.18
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
100 V
|
158 A
|
3.2 mOhms
|
- 20 V, 20 V
|
4 V
|
90 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 100 V, 3.2 mOhm max., 154 A STripFET F8 Power MOSFET
- STL165N10F8AG
- STMicroelectronics
-
1:
$4.05
-
1,774En existencias
|
N.º de artículo de Mouser
511-STL165N10F8AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 100 V, 3.2 mOhm max., 154 A STripFET F8 Power MOSFET
|
|
1,774En existencias
|
|
|
$4.05
|
|
|
$2.48
|
|
|
$2.18
|
|
|
$2.02
|
|
|
$1.92
|
|
|
$1.30
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
100 V
|
158 A
|
3.2 mOhms
|
- 20 V, 20 V
|
4 V
|
90 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel logic level 40 V, 1.0 mOhm max., 304 A, STripFET F8 Power MOSFET
- STL300N4LF8
- STMicroelectronics
-
1:
$2.58
-
2,767En existencias
|
N.º de artículo de Mouser
511-STL300N4LF8
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel logic level 40 V, 1.0 mOhm max., 304 A, STripFET F8 Power MOSFET
|
|
2,767En existencias
|
|
|
$2.58
|
|
|
$1.74
|
|
|
$1.19
|
|
|
$0.985
|
|
|
$0.932
|
|
|
$0.853
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8
|
N-Channel
|
1 Channel
|
40 V
|
304 A
|
1 mOhms
|
- 20 V, 20 V
|
2 V
|
70 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel enhancement mode logic level 40V 0.8mOhm 360A STripFET F8 Power MOSFET
- STL320N4LF8
- STMicroelectronics
-
1:
$2.98
-
4,580En existencias
|
N.º de artículo de Mouser
511-STL320N4LF8
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel enhancement mode logic level 40V 0.8mOhm 360A STripFET F8 Power MOSFET
|
|
4,580En existencias
|
|
|
$2.98
|
|
|
$1.88
|
|
|
$1.40
|
|
|
$1.19
|
|
|
$1.04
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
40 V
|
360 A
|
800 uOhms
|
- 20 V, 20 V
|
2 V
|
43 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-Channel 40 V, 0.85 mOhm max., 350A STripFET F8 Power MOSFET
- STL325N4F8AG
- STMicroelectronics
-
1:
$3.26
-
2,534En existencias
|
N.º de artículo de Mouser
511-STL325N4F8AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-Channel 40 V, 0.85 mOhm max., 350A STripFET F8 Power MOSFET
|
|
2,534En existencias
|
|
|
$3.26
|
|
|
$2.12
|
|
|
$1.48
|
|
|
$1.26
|
|
|
$1.21
|
|
|
$1.18
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
40 V
|
373 A
|
1.1 mOhms
|
- 16 V, 16 V
|
2 V
|
95 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V Logic Level, 0.55 mOhm STripFET F8 Power MOSFET
- STL325N4LF8AG
- STMicroelectronics
-
1:
$2.63
-
3,968En existencias
|
N.º de artículo de Mouser
511-STL325N4LF8AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V Logic Level, 0.55 mOhm STripFET F8 Power MOSFET
|
|
3,968En existencias
|
|
|
$2.63
|
|
|
$1.83
|
|
|
$1.39
|
|
|
$1.23
|
|
|
$1.20
|
|
|
$1.20
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
|
|
N-Channel
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
- STW65N023M9-4
- STMicroelectronics
-
1:
$17.23
-
522En existencias
|
N.º de artículo de Mouser
511-STW65N023M9-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
|
|
522En existencias
|
|
|
$17.23
|
|
|
$10.85
|
|
|
$10.84
|
|
|
$10.83
|
|
|
$9.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
95 A
|
23 mOhms
|
- 30 V, 30 V
|
4.2 V
|
230 nC
|
- 55 C
|
+ 150 C
|
463 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
- STW65N045M9-4
- STMicroelectronics
-
1:
$9.73
-
580En existencias
|
N.º de artículo de Mouser
511-STW65N045M9-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
|
|
580En existencias
|
|
|
$9.73
|
|
|
$5.81
|
|
|
$5.80
|
|
|
$5.23
|
|
|
$4.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
54 A
|
45 mOhms
|
- 30 V, 30 V
|
4.2 V
|
80 nC
|
- 55 C
|
+ 150 C
|
312 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
- STWA65N023M9
- STMicroelectronics
-
1:
$14.64
-
344En existencias
|
N.º de artículo de Mouser
511-STWA65N023M9
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
|
|
344En existencias
|
|
|
$14.64
|
|
|
$8.95
|
|
|
$8.49
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
|
95 A
|
|
- 30 V, 30 V
|
4.2 V
|
230 nC
|
- 55 C
|
+ 150 C
|
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
- STWA65N045M9
- STMicroelectronics
-
1:
$9.53
-
1,195En existencias
-
1,200En pedido
|
N.º de artículo de Mouser
511-STWA65N045M9
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
|
|
1,195En existencias
1,200En pedido
|
|
|
$9.53
|
|
|
$5.62
|
|
|
$4.94
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
650 V
|
54 A
|
45 mOhms
|
- 30 V, 30 V
|
4.2 V
|
80 nC
|
- 55 C
|
+ 150 C
|
312 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package
- STB20N90K5
- STMicroelectronics
-
1:
$7.25
-
5,329En existencias
|
N.º de artículo de Mouser
511-STB20N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package
|
|
5,329En existencias
|
|
|
$7.25
|
|
|
$4.91
|
|
|
$3.69
|
|
|
$3.44
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
900 V
|
20 A
|
210 mOhms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) NCh 30V 0.0032Ohm 20A MOSFET
- STD17NF25
- STMicroelectronics
-
1:
$1.99
-
24,990En existencias
|
N.º de artículo de Mouser
511-STD17NF25
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) NCh 30V 0.0032Ohm 20A MOSFET
|
|
24,990En existencias
|
|
|
$1.99
|
|
|
$1.28
|
|
|
$0.86
|
|
|
$0.683
|
|
|
$0.629
|
|
|
$0.598
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
250 V
|
17 A
|
165 mOhms
|
- 20 V, 20 V
|
2 V
|
29.5 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 250 V 17A STripFET II
- STD18NF25
- STMicroelectronics
-
1:
$2.79
-
17,882En existencias
|
N.º de artículo de Mouser
511-STD18NF25
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 250 V 17A STripFET II
|
|
17,882En existencias
|
|
|
$2.79
|
|
|
$1.81
|
|
|
$1.25
|
|
|
$1.02
|
|
|
$0.95
|
|
|
$0.95
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
250 V
|
17 A
|
165 mOhms
|
- 20 V, 20 V
|
3 V
|
29.5 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
- STD5N60M2
- STMicroelectronics
-
1:
$1.71
-
6,550En existencias
-
2,500En pedido
|
N.º de artículo de Mouser
511-STD5N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
|
|
6,550En existencias
2,500En pedido
|
|
|
$1.71
|
|
|
$1.09
|
|
|
$0.724
|
|
|
$0.572
|
|
|
$0.52
|
|
|
$0.473
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
3.5 A
|
1.4 Ohms
|
- 25 V, 25 V
|
3 V
|
8.5 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
- STD9NM40N
- STMicroelectronics
-
1:
$2.40
-
2,888En existencias
|
N.º de artículo de Mouser
511-STD9NM40N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
|
|
2,888En existencias
|
|
|
$2.40
|
|
|
$1.55
|
|
|
$1.06
|
|
|
$0.848
|
|
|
$0.822
|
|
|
$0.759
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
400 V
|
5.6 A
|
790 mOhms
|
- 25 V, 25 V
|
3 V
|
14 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 2.1mOhm 180A STripFET VI
- STH310N10F7-2
- STMicroelectronics
-
1:
$5.80
-
8,169En existencias
|
N.º de artículo de Mouser
511-STH310N10F7-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 2.1mOhm 180A STripFET VI
|
|
8,169En existencias
|
|
|
$5.80
|
|
|
$4.01
|
|
|
$2.98
|
|
|
$2.88
|
|
|
$2.33
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
2.5 mOhms
|
- 20 V, 20 V
|
3.8 V
|
180 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 p
- STL130N6F7
- STMicroelectronics
-
1:
$2.80
-
20,021En existencias
-
21,000En pedido
|
N.º de artículo de Mouser
511-STL130N6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 p
|
|
20,021En existencias
21,000En pedido
|
|
|
$2.80
|
|
|
$1.81
|
|
|
$1.25
|
|
|
$1.02
|
|
|
$0.949
|
|
|
$0.949
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
60 V
|
130 A
|
3.5 mOhms
|
- 20 V, 20 V
|
2 V
|
42 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 1.3 m? typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6
- STL210N4F7
- STMicroelectronics
-
1:
$2.42
-
2,643En existencias
|
N.º de artículo de Mouser
511-STL210N4F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 1.3 m? typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6
|
|
2,643En existencias
|
|
|
$2.42
|
|
|
$1.55
|
|
|
$1.05
|
|
|
$0.876
|
|
|
$0.771
|
|
|
$0.758
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
- STL36DN6F7
- STMicroelectronics
-
1:
$1.42
-
42,174En existencias
|
N.º de artículo de Mouser
511-STL36DN6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
|
|
42,174En existencias
|
|
|
$1.42
|
|
|
$0.897
|
|
|
$0.595
|
|
|
$0.465
|
|
|
$0.424
|
|
|
$0.375
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
2 Channel
|
60 V
|
33 A
|
23 mOhms, 23 mOhms
|
- 20 V, 20 V
|
2 V
|
8 nC
|
- 55 C
|
+ 175 C
|
58 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-Ch 30V 11A 0.016 Ohm STripFET V
- STL40DN3LLH5
- STMicroelectronics
-
1:
$1.71
-
40,812En existencias
|
N.º de artículo de Mouser
511-STL40DN3LLH5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-Ch 30V 11A 0.016 Ohm STripFET V
|
|
40,812En existencias
|
|
|
$1.71
|
|
|
$1.09
|
|
|
$0.728
|
|
|
$0.574
|
|
|
$0.525
|
|
|
$0.484
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
2 Channel
|
30 V
|
40 A
|
16 mOhms
|
- 22 V, 22 V
|
1.5 V
|
4.5 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|