|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.86Ohm 5A MDmesh M2
- STF7N60M2
- STMicroelectronics
-
1:
$1.71
-
1,929En existencias
|
N.º de artículo de Mouser
511-STF7N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.86Ohm 5A MDmesh M2
|
|
1,929En existencias
|
|
|
$1.71
|
|
|
$0.817
|
|
|
$0.729
|
|
|
$0.575
|
|
|
Ver
|
|
|
$0.525
|
|
|
$0.485
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
5 A
|
860 mOhms
|
- 25 V, 25 V
|
3 V
|
8.8 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
- STL10N60M6
- STMicroelectronics
-
1:
$2.36
-
1,767En existencias
|
N.º de artículo de Mouser
511-STL10N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
|
|
1,767En existencias
|
|
|
$2.36
|
|
|
$1.52
|
|
|
$1.04
|
|
|
$0.836
|
|
|
$0.764
|
|
|
$0.752
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
1 Channel
|
600 V
|
5.5 A
|
660 mOhms
|
- 25 V, 25 V
|
3.25 V
|
8.8 nC
|
- 55 C
|
+ 150 C
|
48 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 2,1 Ohm typ., 120 A, STripFET F7 Power MOSFET in a TO-220 packag
- STP220N6F7
- STMicroelectronics
-
1:
$2.92
-
1,000En existencias
|
N.º de artículo de Mouser
511-STP220N6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 2,1 Ohm typ., 120 A, STripFET F7 Power MOSFET in a TO-220 packag
|
|
1,000En existencias
|
|
|
$2.92
|
|
|
$1.37
|
|
|
$1.31
|
|
|
$1.06
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
120 A
|
2.4 mOhms
|
- 20 V, 20 V
|
4 V
|
100 nC
|
- 55 C
|
+ 175 C
|
237 W
|
Enhancement
|
|
STripFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 18A Mdmesh M2
- STP24N60M2
- STMicroelectronics
-
1:
$3.47
-
1,036En existencias
|
N.º de artículo de Mouser
511-STP24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 18A Mdmesh M2
|
|
1,036En existencias
|
|
|
$3.47
|
|
|
$1.49
|
|
|
$1.40
|
|
|
$1.28
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
168 mOhms
|
- 25 V, 25 V
|
3 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 800V 3.5Ohm typ 2A Zener-protected
- STP2N80K5
- STMicroelectronics
-
1:
$1.08
-
2,823En existencias
-
2,000Se espera el 27/4/2026
|
N.º de artículo de Mouser
511-STP2N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 800V 3.5Ohm typ 2A Zener-protected
|
|
2,823En existencias
2,000Se espera el 27/4/2026
|
|
|
$1.08
|
|
|
$0.634
|
|
|
$0.594
|
|
|
$0.529
|
|
|
Ver
|
|
|
$0.507
|
|
|
$0.455
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
2 A
|
3.5 Ohms
|
- 30 V, 30 V
|
4 V
|
3 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
- STP38N65M5
- STMicroelectronics
-
1:
$3.19
-
450En existencias
|
N.º de artículo de Mouser
511-STP38N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
|
|
450En existencias
|
|
|
$3.19
|
|
|
$2.69
|
|
|
$2.68
|
|
|
$2.66
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
95 mOhms
|
- 25 V, 25 V
|
3 V
|
71 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-3ohms Zener SuperMESH 3A
- STP4NK80ZFP
- STMicroelectronics
-
1:
$3.04
-
1,355En existencias
|
N.º de artículo de Mouser
511-STP4NK80ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-3ohms Zener SuperMESH 3A
|
|
1,355En existencias
|
|
|
$3.04
|
|
|
$1.17
|
|
|
$1.11
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
3.5 Ohms
|
- 30 V, 30 V
|
4.5 V
|
22.5 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.3Ohm 14A pwr MDmesh K5
- STW15N80K5
- STMicroelectronics
-
1:
$5.00
-
415En existencias
|
N.º de artículo de Mouser
511-STW15N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.3Ohm 14A pwr MDmesh K5
|
|
415En existencias
|
|
|
$5.00
|
|
|
$2.91
|
|
|
$2.33
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
14 A
|
300 mOhms
|
- 30 V, 30 V
|
3 V
|
32 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.108Ohm typ. 26A MDmesh M2
- STW33N60M2
- STMicroelectronics
-
1:
$5.52
-
394En existencias
|
N.º de artículo de Mouser
511-STW33N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.108Ohm typ. 26A MDmesh M2
|
|
394En existencias
|
|
|
$5.52
|
|
|
$3.25
|
|
|
$2.53
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
108 mOhms
|
- 25 V, 25 V
|
3 V
|
45.5 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
- STB10N60M2
- STMicroelectronics
-
1:
$2.43
-
1,075En existencias
|
N.º de artículo de Mouser
511-STB10N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
|
|
1,075En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.868
|
|
|
$0.785
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
7.5 A
|
600 mOhms
|
- 25 V, 25 V
|
4 V
|
13.5 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
- STD6N60M2
- STMicroelectronics
-
1:
$1.99
-
2,265En existencias
|
N.º de artículo de Mouser
511-STD6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
|
|
2,265En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.862
|
|
|
$0.731
|
|
|
$0.634
|
|
|
$0.581
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
4.5 A
|
1.06 Ohms
|
- 25 V, 25 V
|
3 V
|
8 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade P-channel -30 V, 5 mOhm typ., -80 A, STripFET H6 Power MOSFET i
- STD95P3LLH6AG
- STMicroelectronics
-
1:
$2.43
-
1,097En existencias
|
N.º de artículo de Mouser
511-STD95P3LLH6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade P-channel -30 V, 5 mOhm typ., -80 A, STripFET H6 Power MOSFET i
|
|
1,097En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.855
|
|
|
$0.818
|
|
|
$0.786
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
30 V
|
80 A
|
9.7 mOhms
|
- 18 V, 18 V
|
2.5 V
|
113 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
- STF26N60M2
- STMicroelectronics
-
1:
$3.41
-
981En existencias
|
N.º de artículo de Mouser
511-STF26N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
|
|
981En existencias
|
|
|
$3.41
|
|
|
$1.72
|
|
|
$1.55
|
|
|
$1.26
|
|
|
$1.25
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
165 mOhms
|
- 25 V, 25 V
|
2 V
|
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide cr
- STFH24N60M2
- STMicroelectronics
-
1:
$2.18
-
1,018En existencias
|
N.º de artículo de Mouser
511-STFH24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide cr
|
|
1,018En existencias
|
|
|
$2.18
|
|
|
$1.40
|
|
|
$1.27
|
|
|
$1.16
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
168 mOhms
|
- 25 V, 25 V
|
2 V
|
29 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 p
- STH200N10WF7-2
- STMicroelectronics
-
1:
$4.99
-
374En existencias
|
N.º de artículo de Mouser
511-STH200N10WF7-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 p
|
|
374En existencias
|
|
|
$4.99
|
|
|
$3.56
|
|
|
$2.71
|
|
|
$2.68
|
|
|
$2.51
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
4 mOhms
|
- 20 V, 20 V
|
4.5 V
|
93 nC
|
- 55 C
|
+ 175 C
|
340 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
- STI20N65M5
- STMicroelectronics
-
1:
$3.85
-
958En existencias
|
N.º de artículo de Mouser
511-STI20N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
|
|
958En existencias
|
|
|
$3.85
|
|
|
$1.88
|
|
|
$1.53
|
|
|
$1.43
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
650 V
|
18 A
|
160 mOhms
|
- 25 V, 25 V
|
4 V
|
36 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
- STL13N60M6
- STMicroelectronics
-
1:
$2.61
-
2,794En existencias
|
N.º de artículo de Mouser
511-STL13N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
|
|
2,794En existencias
|
|
|
$2.61
|
|
|
$1.67
|
|
|
$1.14
|
|
|
$0.925
|
|
|
$0.835
|
|
|
$0.821
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
1 Channel
|
600 V
|
7 A
|
415 mOhms
|
- 25 V, 25 V
|
3.25 V
|
13 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.066Ohm 31A MDmesh M5
- STL36N55M5
- STMicroelectronics
-
1:
$6.18
-
2,982En existencias
|
N.º de artículo de Mouser
511-STL36N55M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.066Ohm 31A MDmesh M5
|
|
2,982En existencias
|
|
|
$6.18
|
|
|
$4.29
|
|
|
$3.11
|
|
|
$3.05
|
|
|
$2.91
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
550 V
|
22.5 A
|
90 mOhms
|
- 25 V, 25 V
|
4 V
|
62 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
- STL40N10F7
- STMicroelectronics
-
1:
$2.11
-
2,086En existencias
|
N.º de artículo de Mouser
511-STL40N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
|
|
2,086En existencias
|
|
|
$2.11
|
|
|
$1.34
|
|
|
$0.924
|
|
|
$0.736
|
|
|
$0.66
|
|
|
$0.628
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
100 V
|
20 A
|
24 mOhms
|
- 20 V, 20 V
|
4 V
|
14 nC
|
- 55 C
|
+ 175 C
|
5 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6
- STL45P3LLH6
- STMicroelectronics
-
1:
$1.93
-
2,872En existencias
|
N.º de artículo de Mouser
511-STL45P3LLH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6
|
|
2,872En existencias
|
|
|
$1.93
|
|
|
$1.21
|
|
|
$0.795
|
|
|
$0.631
|
|
|
$0.56
|
|
|
$0.475
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
P-Channel
|
1 Channel
|
30 V
|
45 A
|
11 mOhms
|
- 20 V, 20 V
|
1 V
|
24 nC
|
- 55 C
|
+ 175 C
|
4.8 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
- STP24N60DM2
- STMicroelectronics
-
1:
$3.97
-
853En existencias
|
N.º de artículo de Mouser
511-STP24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
|
|
853En existencias
|
|
|
$3.97
|
|
|
$1.84
|
|
|
$1.69
|
|
|
$1.54
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
200 mOhms
|
- 25 V, 25 V
|
4 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-1ohm Zener SuperMESH 7.5A
- STP9NK70ZFP
- STMicroelectronics
-
1:
$3.08
-
487En existencias
|
N.º de artículo de Mouser
511-STP9NK70ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-1ohm Zener SuperMESH 7.5A
|
|
487En existencias
|
|
|
$3.08
|
|
|
$1.90
|
|
|
$1.69
|
|
|
$1.66
|
|
|
$1.64
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
7.5 A
|
1.2 Ohms
|
- 30 V, 30 V
|
3.75 V
|
48 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V Mdmesh 8A
- STU10NM60N
- STMicroelectronics
-
1:
$4.01
-
2,998En existencias
-
2,998En pedido
|
N.º de artículo de Mouser
511-STU10NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V Mdmesh 8A
|
|
2,998En existencias
2,998En pedido
|
|
|
$4.01
|
|
|
$2.62
|
|
|
$2.05
|
|
|
$1.72
|
|
|
Ver
|
|
|
$1.59
|
|
|
$1.49
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
530 mOhms
|
- 25 V, 25 V
|
2 V
|
19 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
- STU16N65M2
- STMicroelectronics
-
1:
$2.86
-
808En existencias
|
N.º de artículo de Mouser
511-STU16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
|
|
808En existencias
|
|
|
$2.86
|
|
|
$1.33
|
|
|
$1.21
|
|
|
$1.03
|
|
|
$0.98
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
2 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package
- STW8N90K5
- STMicroelectronics
-
1:
$4.35
-
659En existencias
|
N.º de artículo de Mouser
511-STW8N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package
|
|
659En existencias
|
|
|
$4.35
|
|
|
$2.43
|
|
|
$1.76
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
680 mOhms
|
- 30 V, 30 V
|
3 V
|
11 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|