|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8
- STL33N60M2
- STMicroelectronics
-
1:
$4.97
-
1,617En existencias
|
N.º de artículo de Mouser
511-STL33N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8
|
|
1,617En existencias
|
|
|
$4.97
|
|
|
$4.75
|
|
|
$3.72
|
|
|
$3.31
|
|
|
$2.83
|
|
|
$1.95
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
600 V
|
21.5 A
|
135 mOhms
|
- 25 V, 25 V
|
3 V
|
47 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 14A Mosfet Mdmesh II Power
- STP19NM50N
- STMicroelectronics
-
1:
$3.68
-
644En existencias
|
N.º de artículo de Mouser
511-STP19NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 14A Mosfet Mdmesh II Power
|
|
644En existencias
|
|
|
$3.68
|
|
|
$2.33
|
|
|
$2.20
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
14 A
|
250 mOhms
|
- 25 V, 25 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.124 Ohm 22 A MDmesh V
- STP31N65M5
- STMicroelectronics
-
1:
$4.36
-
739En existencias
|
N.º de artículo de Mouser
511-STP31N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.124 Ohm 22 A MDmesh V
|
|
739En existencias
|
|
|
$4.36
|
|
|
$2.05
|
|
|
$1.94
|
|
|
$1.76
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
22 A
|
148 mOhms
|
- 25 V, 25 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
- STU4N62K3
- STMicroelectronics
-
1:
$2.06
-
2,904En existencias
|
N.º de artículo de Mouser
511-STU4N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
|
|
2,904En existencias
|
|
|
$2.06
|
|
|
$1.01
|
|
|
$0.904
|
|
|
$0.763
|
|
|
$0.675
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
620 V
|
3.8 A
|
2 Ohms
|
- 30 V, 30 V
|
3 V
|
22 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 620V-1.1ohms 5.5A
- STU6N62K3
- STMicroelectronics
-
1:
$2.70
-
2,970En existencias
|
N.º de artículo de Mouser
511-STU6N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 620V-1.1ohms 5.5A
|
|
2,970En existencias
|
|
|
$2.70
|
|
|
$1.26
|
|
|
$1.13
|
|
|
$0.957
|
|
|
$0.90
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
620 V
|
5.5 A
|
1.28 Ohms
|
- 30 V, 30 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.198 Ohm 15A MDmesh FET
- STW18N65M5
- STMicroelectronics
-
1:
$4.28
-
687En existencias
|
N.º de artículo de Mouser
511-STW18N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.198 Ohm 15A MDmesh FET
|
|
687En existencias
|
|
|
$4.28
|
|
|
$2.19
|
|
|
$1.72
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
9.4 A
|
220 mOhms
|
- 25 V, 25 V
|
5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
- STD6N65M2
- STMicroelectronics
-
1:
$1.49
-
3,192En existencias
|
N.º de artículo de Mouser
511-STD6N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
|
|
3,192En existencias
|
|
|
$1.49
|
|
|
$0.942
|
|
|
$0.627
|
|
|
$0.492
|
|
|
$0.448
|
|
|
$0.401
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
4 A
|
1.35 Ohms
|
- 25 V, 25 V
|
3 V
|
9.8 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
- STD8N60DM2
- STMicroelectronics
-
1:
$1.83
-
1,754En existencias
|
N.º de artículo de Mouser
511-STD8N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
1,754En existencias
|
|
|
$1.83
|
|
|
$1.17
|
|
|
$0.775
|
|
|
$0.619
|
|
|
$0.557
|
|
|
$0.505
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
570 mOhms
|
- 30 V, 30 V
|
3 V
|
4 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220FP package
- STF10N105K5
- STMicroelectronics
-
1:
$3.59
-
1,025En existencias
-
1,000En pedido
|
N.º de artículo de Mouser
511-STF10N105K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220FP package
|
|
1,025En existencias
1,000En pedido
|
|
|
$3.59
|
|
|
$1.70
|
|
|
$1.52
|
|
|
$1.34
|
|
|
$1.33
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1.05 kV
|
6 A
|
1 Ohms
|
- 30 V, 30 V
|
3 V
|
21.5 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V Mdmesh 8A
- STF10NM60N
- STMicroelectronics
-
1:
$3.55
-
768En existencias
|
N.º de artículo de Mouser
511-STF10NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V Mdmesh 8A
|
|
768En existencias
|
|
|
$3.55
|
|
|
$1.82
|
|
|
$1.71
|
|
|
$1.56
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
550 mOhms
|
- 25 V, 25 V
|
4 V
|
19 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
- STH6N95K5-2
- STMicroelectronics
-
1:
$3.42
-
889En existencias
|
N.º de artículo de Mouser
511-STH6N95K5-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
|
|
889En existencias
|
|
|
$3.42
|
|
|
$2.24
|
|
|
$1.56
|
|
|
$1.35
|
|
|
$1.26
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.25 Ohms
|
- 30 V, 30 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 9 Amp Zener SuperMESH
- STP11NK40Z
- STMicroelectronics
-
1:
$2.54
-
1,313En existencias
|
N.º de artículo de Mouser
511-STP11NK40Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 9 Amp Zener SuperMESH
|
|
1,313En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
400 V
|
9 A
|
550 mOhms
|
- 30 V, 30 V
|
4.5 V
|
32 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 400V-0.49ohms Zener SuperMESH 9A
- STP11NK40ZFP
- STMicroelectronics
-
1:
$3.15
-
1,245En existencias
|
N.º de artículo de Mouser
511-STP11NK40ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 400V-0.49ohms Zener SuperMESH 9A
|
|
1,245En existencias
|
|
|
$3.15
|
|
|
$1.58
|
|
|
$1.42
|
|
|
$1.16
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
400 V
|
9 A
|
550 mOhms
|
- 30 V, 30 V
|
4.5 V
|
32 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.190ohm 16A Mdmesh
- STP22NM60N
- STMicroelectronics
-
1:
$4.83
-
609En existencias
|
N.º de artículo de Mouser
511-STP22NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.190ohm 16A Mdmesh
|
|
609En existencias
|
|
|
$4.83
|
|
|
$2.23
|
|
|
$2.11
|
|
|
$1.97
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
200 mOhms
|
- 30 V, 30 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220 package
- STP33N60M6
- STMicroelectronics
-
1:
$5.03
-
670En existencias
|
N.º de artículo de Mouser
511-STP33N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
670En existencias
|
|
|
$5.03
|
|
|
$3.34
|
|
|
$2.38
|
|
|
$2.11
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
25 A
|
125 mOhms
|
- 25 V, 25 V
|
3.25 V
|
33.4 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in a TO-220 package
- STP7N105K5
- STMicroelectronics
-
1:
$3.65
-
897En existencias
|
N.º de artículo de Mouser
511-STP7N105K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in a TO-220 package
|
|
897En existencias
|
|
|
$3.65
|
|
|
$1.85
|
|
|
$1.67
|
|
|
$1.59
|
|
|
$1.37
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1.05 kV
|
4 A
|
2 Ohms
|
- 30 V, 30 V
|
4 V
|
17 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 3.5 Ohm typ., 500 mA SuperMESH Power MOSFET in a TO-92 package
- STQ2HNK60ZR-AP
- STMicroelectronics
-
1:
$1.18
-
3,357En existencias
|
N.º de artículo de Mouser
511-STQ2HNK60ZR-AP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 3.5 Ohm typ., 500 mA SuperMESH Power MOSFET in a TO-92 package
|
|
3,357En existencias
|
|
|
$1.18
|
|
|
$0.834
|
|
|
$0.56
|
|
|
$0.443
|
|
|
$0.397
|
|
|
$0.346
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
Through Hole
|
TO-92-3
|
N-Channel
|
1 Channel
|
600 V
|
500 mA
|
4.8 Ohms
|
- 30 V, 30 V
|
3 V
|
15 nC
|
- 55 C
|
+ 150 C
|
3 W
|
Enhancement
|
|
SuperMESH
|
Ammo Pack
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 packag
- STW88N65M5-4
- STMicroelectronics
-
1:
$15.40
-
166En existencias
|
N.º de artículo de Mouser
511-STW88N65M5-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 packag
|
|
166En existencias
|
|
|
$15.40
|
|
|
$10.61
|
|
|
$10.58
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
84 A
|
29 mOhms
|
- 25 V, 25 V
|
3 V
|
204 nC
|
- 55 C
|
+ 150 C
|
450 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 1.15 Ohm typ 7 A SuperMESH Power MOSFET
- STW9NK95Z
- STMicroelectronics
-
1:
$4.00
-
777En existencias
|
N.º de artículo de Mouser
511-STW9NK95Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 1.15 Ohm typ 7 A SuperMESH Power MOSFET
|
|
777En existencias
|
|
|
$4.00
|
|
|
$2.20
|
|
|
$1.55
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
950 V
|
7 A
|
1.38 Ohms
|
- 30 V, 30 V
|
3 V
|
56 nC
|
- 55 C
|
+ 150 C
|
160 W
|
Enhancement
|
|
SuperMESH
|
Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 pack
- STP15N60M2-EP
- STMicroelectronics
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1:
$2.62
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1,962En existencias
-
NRND
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N.º de artículo de Mouser
511-STP15N60M2-EP
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 pack
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1,962En existencias
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$2.62
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$1.36
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$1.11
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$0.997
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Ver
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$0.809
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$0.806
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$0.765
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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600 V
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11 A
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378 mOhms
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- 25 V, 25 V
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2 V
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17 nC
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- 55 C
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+ 150 C
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110 W
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Enhancement
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET i
- STLD125N4F6AG
- STMicroelectronics
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1:
$3.21
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2,487En existencias
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NRND
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N.º de artículo de Mouser
511-STLD125N4F6AG
NRND
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STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET i
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2,487En existencias
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$3.21
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$2.10
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$1.48
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$1.26
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$1.16
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$1.16
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Min.: 1
Mult.: 1
:
2,500
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Si
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SMD/SMT
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PowerFLAT-5x6-8
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N-Channel
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1 Channel
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40 V
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120 A
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2.4 mOhms
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- 20 V, 20 V
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2 V
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91 nC
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- 55 C
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+ 175 C
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130 W
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Enhancement
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AEC-Q101
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STripFET
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Reel, Cut Tape, MouseReel
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 340 mOhm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
- STD15N60M2-EP
- STMicroelectronics
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1:
$2.32
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2,461En existencias
-
NRND
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N.º de artículo de Mouser
511-STD15N60M2-EP
NRND
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STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 340 mOhm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
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2,461En existencias
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$2.32
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$1.28
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$0.973
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$0.869
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$0.726
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$0.691
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Min.: 1
Mult.: 1
:
2,500
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Si
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SMD/SMT
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DPAK-3 (TO-252-3)
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N-Channel
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1 Channel
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600 V
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11 A
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378 mOhms
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- 25 V, 25 V
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2 V
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17 nC
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- 55 C
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+ 150 C
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110 W
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Enhancement
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MDmesh
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Reel, Cut Tape, MouseReel
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 17A Mdmesh II
- STB24NM60N
- STMicroelectronics
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1:
$7.14
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223En existencias
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N.º de artículo de Mouser
511-STB24NM60N
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STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 17A Mdmesh II
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223En existencias
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$7.14
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$4.82
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$3.61
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$3.31
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Min.: 1
Mult.: 1
:
1,000
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Si
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SMD/SMT
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D2PAK-3 (TO-263-3)
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N-Channel
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1 Channel
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600 V
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17 A
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168 mOhms
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- 30 V, 30 V
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3 V
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46 nC
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- 55 C
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+ 150 C
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125 W
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Enhancement
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MDmesh
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Reel, Cut Tape, MouseReel
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK
- STI13NM60N
- STMicroelectronics
-
1:
$2.70
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913En existencias
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N.º de artículo de Mouser
511-STI13NM60N
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STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK
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913En existencias
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$2.70
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$1.73
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$1.18
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$0.979
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$0.848
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-262-3
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N-Channel
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1 Channel
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600 V
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11 A
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360 mOhms
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- 25 V, 25 V
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2 V
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30 nC
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- 55 C
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+ 150 C
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90 W
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Enhancement
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra
- STFU26N60M2
- STMicroelectronics
-
1:
$3.55
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922En existencias
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N.º de artículo de Mouser
511-STFU26N60M2
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STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra
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922En existencias
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$3.55
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$2.31
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$1.77
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$1.48
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$1.29
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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600 V
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20 A
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165 mOhms
|
- 25 V, 25 V
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2 V
|
34 nC
|
- 55 C
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+ 150 C
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30 W
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Enhancement
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MDmesh
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Tube
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