|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 3 Ohm 2.2A SuperMESH3
- STF2N62K3
- STMicroelectronics
-
1:
$2.32
-
1,841En existencias
|
N.º de artículo de Mouser
511-STF2N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 3 Ohm 2.2A SuperMESH3
|
|
1,841En existencias
|
|
|
$2.32
|
|
|
$0.772
|
|
|
$0.768
|
|
|
$0.767
|
|
|
$0.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
2.2 A
|
3.6 Ohms
|
- 30 V, 30 V
|
3 V
|
15 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
- STF25N60M2-EP
- STMicroelectronics
-
1:
$3.36
-
841En existencias
|
N.º de artículo de Mouser
511-STF25N60M2-EP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
|
|
841En existencias
|
|
|
$3.36
|
|
|
$1.83
|
|
|
$1.66
|
|
|
$1.35
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
188 mOhms
|
- 25 V, 25 V
|
2 V
|
29 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
- STF4N62K3
- STMicroelectronics
-
1:
$2.95
-
963En existencias
|
N.º de artículo de Mouser
511-STF4N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
|
|
963En existencias
|
|
|
$2.95
|
|
|
$1.09
|
|
|
$1.05
|
|
|
$1.02
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
3.8 A
|
2 Ohms
|
- 30 V, 30 V
|
3 V
|
22 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
- STU3N65M6
- STMicroelectronics
-
1:
$1.85
-
2,440En existencias
-
NRND
|
N.º de artículo de Mouser
511-STU3N65M6
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
|
|
2,440En existencias
|
|
|
$1.85
|
|
|
$1.18
|
|
|
$0.781
|
|
|
$0.64
|
|
|
Ver
|
|
|
$0.56
|
|
|
$0.515
|
|
|
$0.514
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
3.5 A
|
1.5 Ohms
|
- 25 V, 25 V
|
2.25 V
|
6 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620 V 8.4 A TO-220 TO-22
- STF10N62K3
- STMicroelectronics
-
1:
$2.71
-
976En existencias
|
N.º de artículo de Mouser
511-STF10N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620 V 8.4 A TO-220 TO-22
|
|
976En existencias
|
|
|
$2.71
|
|
|
$1.74
|
|
|
$1.18
|
|
|
$0.983
|
|
|
$0.851
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
8.4 A
|
680 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
- STO36N60M6
- STMicroelectronics
-
1:
$6.03
-
482En existencias
|
N.º de artículo de Mouser
511-STO36N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
|
|
482En existencias
|
|
|
$6.03
|
|
|
$4.04
|
|
|
$2.91
|
|
|
$2.88
|
|
|
$2.70
|
|
|
$2.70
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
TO-LL-8
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
99 mOhms
|
- 25 V, 25 V
|
4.75 V
|
44.3 nC
|
- 55 C
|
+ 150 C
|
230 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
- STW35N60DM2
- STMicroelectronics
-
1:
$5.52
-
382En existencias
|
N.º de artículo de Mouser
511-STW35N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
|
|
382En existencias
|
|
|
$5.52
|
|
|
$3.13
|
|
|
$2.37
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
28 A
|
110 mOhms
|
- 25 V, 25 V
|
3 V
|
54 nC
|
- 55 C
|
+ 150 C
|
210 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
- STP18N65M2
- STMicroelectronics
-
1:
$3.18
-
873En existencias
|
N.º de artículo de Mouser
511-STP18N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
|
|
873En existencias
|
|
|
$3.18
|
|
|
$1.63
|
|
|
$1.47
|
|
|
$1.19
|
|
|
$1.11
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
12 A
|
275 mOhms
|
- 25 V, 25 V
|
2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620V 1.1
- STP6N62K3
- STMicroelectronics
-
1:
$2.59
-
889En existencias
|
N.º de artículo de Mouser
511-STP6N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620V 1.1
|
|
889En existencias
|
|
|
$2.59
|
|
|
$1.07
|
|
|
$0.891
|
|
|
$0.876
|
|
|
$0.854
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
5.5 A
|
1.28 Ohms
|
- 30 V, 30 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 13 Amp Zener SuperMESH
- STB13NK60ZT4
- STMicroelectronics
-
1:
$4.73
-
710En existencias
|
N.º de artículo de Mouser
511-STB13NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 13 Amp Zener SuperMESH
|
|
710En existencias
|
|
|
$4.73
|
|
|
$3.14
|
|
|
$2.23
|
|
|
$1.95
|
|
|
$1.95
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
550 mOhms
|
- 30 V, 30 V
|
3 V
|
92 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400V 2.7 Ohm 2A SuperMESH3
- STD3N40K3
- STMicroelectronics
-
1:
$2.19
-
1,698En existencias
-
Verificar estado con la fábrica
|
N.º de artículo de Mouser
511-STD3N40K3
Verificar estado con la fábrica
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400V 2.7 Ohm 2A SuperMESH3
|
|
1,698En existencias
|
|
|
$2.19
|
|
|
$1.40
|
|
|
$0.969
|
|
|
$0.822
|
|
|
$0.686
|
|
|
$0.653
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
400 V
|
1.8 A
|
3.4 Ohms
|
- 30 V, 30 V
|
4.5 V
|
11 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
- STF10NM60ND
- STMicroelectronics
-
1:
$2.63
-
946En existencias
-
NRND
|
N.º de artículo de Mouser
511-STF10NM60ND
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
|
|
946En existencias
|
|
|
$2.63
|
|
|
$1.32
|
|
|
$1.19
|
|
|
$1.10
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
8 A
|
600 mOhms
|
- 25 V, 25 V
|
3 V
|
20 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 89 mOhm 32A MDmesh DM6 half-bridge Power MOSFET
- SH32N65DM6AG
- STMicroelectronics
-
1:
$17.68
-
45En existencias
|
N.º de artículo de Mouser
511-SH32N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 89 mOhm 32A MDmesh DM6 half-bridge Power MOSFET
|
|
45En existencias
|
|
|
$17.68
|
|
|
$12.98
|
|
|
$9.29
|
|
|
$9.29
|
|
Min.: 1
Mult.: 1
:
200
|
|
|
Si
|
|
|
N-Channel
|
|
650 V
|
32 A
|
89 mOhms
|
|
|
|
|
|
|
|
AQG 324
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 132 mOhm typ., 17 A MDmesh M9 Power MOSFET
- STD65N160M9
- STMicroelectronics
-
1:
$3.65
-
770En existencias
|
N.º de artículo de Mouser
511-STD65N160M9
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 132 mOhm typ., 17 A MDmesh M9 Power MOSFET
|
|
770En existencias
|
|
|
$3.65
|
|
|
$2.39
|
|
|
$1.68
|
|
|
$1.47
|
|
|
$1.41
|
|
|
$1.37
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
17 A
|
160 mOhms
|
- 30 V, 30 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 150 C
|
106 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package
- STD80N450K6
- STMicroelectronics
-
1:
$4.13
-
816En existencias
|
N.º de artículo de Mouser
511-STD80N450K6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package
|
|
816En existencias
|
|
|
$4.13
|
|
|
$2.72
|
|
|
$1.92
|
|
|
$1.74
|
|
|
$1.64
|
|
|
$1.62
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
10 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
17.3 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-Channel Enhancement Mode Logic Level 40V, 1mOhm, 305A STripFET F8
- STL305N4LF8AG
- STMicroelectronics
-
1:
$2.96
-
401En existencias
|
N.º de artículo de Mouser
511-STL305N4LF8AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-Channel Enhancement Mode Logic Level 40V, 1mOhm, 305A STripFET F8
|
|
401En existencias
|
|
|
$2.96
|
|
|
$1.92
|
|
|
$1.33
|
|
|
$1.10
|
|
|
$1.06
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8
|
N-Channel
|
1 Channel
|
40 V
|
304 A
|
1 mOhms
|
- 16 V, 16 V
|
2 V
|
70 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET
- STP65N150M9
- STMicroelectronics
-
1:
$4.65
-
101En existencias
|
N.º de artículo de Mouser
511-STP65N150M9
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET
|
|
101En existencias
|
|
|
$4.65
|
|
|
$2.58
|
|
|
$2.21
|
|
|
$1.95
|
|
|
Ver
|
|
|
$1.79
|
|
|
$1.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
150 mOhms
|
- 30 V, 30 V
|
3.2 V
|
32 nC
|
- 55 C
|
+ 150 C
|
140 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STP80N1K1K6
- STMicroelectronics
-
1:
$2.38
-
1,060En existencias
|
N.º de artículo de Mouser
511-STP80N1K1K6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
1,060En existencias
|
|
|
$2.38
|
|
|
$1.54
|
|
|
$1.05
|
|
|
$0.836
|
|
|
Ver
|
|
|
$0.784
|
|
|
$0.764
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 400 mOhm typ., 8 A MDmesh K6 Power MOSFET
- STP80N450K6
- STMicroelectronics
-
1:
$4.42
-
179En existencias
|
N.º de artículo de Mouser
511-STP80N450K6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 400 mOhm typ., 8 A MDmesh K6 Power MOSFET
|
|
179En existencias
|
|
|
$4.42
|
|
|
$2.38
|
|
|
$2.15
|
|
|
$1.77
|
|
|
$1.73
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
10 A
|
450 mOhms
|
|
|
|
|
|
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STP80N600K6
- STMicroelectronics
-
1:
$3.18
-
828En existencias
|
N.º de artículo de Mouser
511-STP80N600K6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
828En existencias
|
|
|
$3.18
|
|
|
$1.60
|
|
|
$1.48
|
|
|
$1.24
|
|
|
$1.08
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
7 A
|
600 mOhms
|
- 30 V, 30 V
|
4 V
|
10.7 nC
|
- 55 C
|
+ 150 C
|
86 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET
- STWA60N043DM9
- STMicroelectronics
-
1:
$10.90
-
82En existencias
|
N.º de artículo de Mouser
511-STWA60N043DM9
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET
|
|
82En existencias
|
|
|
$10.90
|
|
|
$7.84
|
|
|
$6.95
|
|
|
$6.78
|
|
|
$6.62
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
56 A
|
43 mOhms
|
- 30 V, 30 V
|
4.5 V
|
78.6 nC
|
- 55 C
|
+ 150 C
|
312 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30 Volt 40 Amp
- STP40NF03L
- STMicroelectronics
-
1:
$1.54
-
1,315En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP40NF03L
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30 Volt 40 Amp
|
|
1,315En existencias
|
|
|
$1.54
|
|
|
$0.76
|
|
|
$0.646
|
|
|
$0.544
|
|
|
Ver
|
|
|
$0.497
|
|
|
$0.401
|
|
|
$0.38
|
|
|
$0.363
|
|
|
$0.362
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
30 V
|
40 A
|
18 mOhms
|
- 16 V, 16 V
|
2.5 V
|
10.5 nC
|
- 55 C
|
+ 175 C
|
70 W
|
Enhancement
|
|
STripFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 60 Amp
- STP60NF06FP
- STMicroelectronics
-
1:
$2.01
-
441En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP60NF06FP
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 60 Amp
|
|
441En existencias
|
|
|
$2.01
|
|
|
$0.97
|
|
|
$0.868
|
|
|
$0.69
|
|
|
Ver
|
|
|
$0.631
|
|
|
$0.605
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
60 V
|
60 A
|
16 mOhms
|
- 20 V, 20 V
|
4 V
|
49 nC
|
- 55 C
|
+ 175 C
|
30 W
|
Enhancement
|
|
STripFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) RF POWER transistor, N-channel enhancement-mode, lateral Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
- PD57018S-E
- STMicroelectronics
-
1:
$29.28
-
178En existencias
|
N.º de artículo de Mouser
511-PD57018S-E
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) RF POWER transistor, N-channel enhancement-mode, lateral Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
|
|
178En existencias
|
|
|
$29.28
|
|
|
$22.91
|
|
|
$22.47
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerSO-10RF-2
|
N-Channel
|
1 Channel
|
65 V
|
2.5 A
|
760 mOhms
|
- 20 V, 20 V
|
2 V
|
|
- 65 C
|
+ 165 C
|
31.7 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 10 Amp Zener SuperMESH
- STB10NK60ZT4
- STMicroelectronics
-
1:
$4.63
-
1,937En existencias
|
N.º de artículo de Mouser
511-STB10NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 10 Amp Zener SuperMESH
|
|
1,937En existencias
|
|
|
$4.63
|
|
|
$3.07
|
|
|
$2.19
|
|
|
$2.04
|
|
|
$1.86
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
750 mOhms
|
- 30 V, 30 V
|
4.5 V
|
50 nC
|
- 55 C
|
+ 150 C
|
115 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
