|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
- STD3NK80Z-1
- STMicroelectronics
-
1:
$2.66
-
3,422En existencias
|
N.º de artículo de Mouser
511-STD3NK80Z-1
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
|
|
3,422En existencias
|
|
|
$2.66
|
|
|
$1.10
|
|
|
$1.02
|
|
|
$0.935
|
|
|
$0.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
2.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
4.5 V
|
19 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 2Ohm typ 3.5A Zener-protected
- STD5N95K5
- STMicroelectronics
-
1:
$2.41
-
4,380En existencias
|
N.º de artículo de Mouser
511-STD5N95K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 2Ohm typ 3.5A Zener-protected
|
|
4,380En existencias
|
|
|
$2.41
|
|
|
$1.55
|
|
|
$1.06
|
|
|
$0.842
|
|
|
$0.816
|
|
|
$0.77
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
3.5 A
|
2 Ohms
|
- 30 V, 30 V
|
4 V
|
12.5 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.162 Ohm 17A MDmesh II PWR
- STF23NM50N
- STMicroelectronics
-
1:
$5.01
-
878En existencias
|
N.º de artículo de Mouser
511-STF23NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.162 Ohm 17A MDmesh II PWR
|
|
878En existencias
|
|
|
$5.01
|
|
|
$2.73
|
|
|
$2.59
|
|
|
$2.55
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
17 A
|
190 mOhms
|
- 25 V, 25 V
|
2 V
|
45 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 V 2.1 mOhm 180 A STripFET
- STH310N10F7-6
- STMicroelectronics
-
1:
$6.51
-
1,254En existencias
|
N.º de artículo de Mouser
511-STH310N10F7-6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 V 2.1 mOhm 180 A STripFET
|
|
1,254En existencias
|
|
|
$6.51
|
|
|
$4.38
|
|
|
$3.20
|
|
|
$3.19
|
|
|
$2.98
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2.5 V
|
180 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 80 V, 5.6 mOhm typ., 95 A, STripFET F7 Power MOSFET in a Po
- STL105N8F7AG
- STMicroelectronics
-
1:
$2.58
-
1,873En existencias
|
N.º de artículo de Mouser
511-STL105N8F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 80 V, 5.6 mOhm typ., 95 A, STripFET F7 Power MOSFET in a Po
|
|
1,873En existencias
|
|
|
$2.58
|
|
|
$1.62
|
|
|
$1.14
|
|
|
$0.917
|
|
|
$0.89
|
|
|
$0.854
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8
|
N-Channel
|
1 Channel
|
80 V
|
95 A
|
6.5 mOhms
|
- 20 V, 20 V
|
4.5 V
|
46 nC
|
- 55 C
|
+ 175 C
|
127 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6
- STL13N60DM2
- STMicroelectronics
-
1:
$2.78
-
3,195En existencias
-
3,000En pedido
|
N.º de artículo de Mouser
511-STL13N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6
|
|
3,195En existencias
3,000En pedido
|
|
|
$2.78
|
|
|
$1.80
|
|
|
$1.24
|
|
|
$1.02
|
|
|
$0.999
|
|
|
$0.932
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
350 mOhms
|
- 25 V, 25 V
|
3 V
|
19 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 1.68 mOhm typ., 120 A STripFET F7 Power MOSFET
- STL190N4F7AG
- STMicroelectronics
-
1:
$2.72
-
2,190En existencias
|
N.º de artículo de Mouser
511-STL190N4F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 1.68 mOhm typ., 120 A STripFET F7 Power MOSFET
|
|
2,190En existencias
|
|
|
$2.72
|
|
|
$1.74
|
|
|
$1.19
|
|
|
$0.986
|
|
|
$0.843
|
|
|
$0.829
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.68 mOhms
|
- 20 V, 20 V
|
2 V
|
41 nC
|
- 55 C
|
+ 175 C
|
127 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 3.7Ohm typ 2A Zener-protected
- STL2N80K5
- STMicroelectronics
-
1:
$1.51
-
5,413En existencias
|
N.º de artículo de Mouser
511-STL2N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 3.7Ohm typ 2A Zener-protected
|
|
5,413En existencias
|
|
|
$1.51
|
|
|
$0.987
|
|
|
$0.689
|
|
|
$0.551
|
|
|
$0.503
|
|
|
$0.461
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
800 V
|
2 A
|
3.7 Ohms
|
- 30 V, 30 V
|
4 V
|
3 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 70 mOhm typ., 31 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV
- STL47N60M6
- STMicroelectronics
-
1:
$6.31
-
1,923En existencias
|
N.º de artículo de Mouser
511-STL47N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 70 mOhm typ., 31 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV
|
|
1,923En existencias
|
|
|
$6.31
|
|
|
$4.24
|
|
|
$3.07
|
|
|
$3.06
|
|
|
$2.95
|
|
|
$2.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
80 mOhms
|
- 25 V, 25 V
|
3.25 V
|
57 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30 V 0.021 Ohm 6 A STripFET VI DG
- STL6N3LLH6
- STMicroelectronics
-
1:
$0.92
-
9,677En existencias
|
N.º de artículo de Mouser
511-STL6N3LLH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30 V 0.021 Ohm 6 A STripFET VI DG
|
|
9,677En existencias
|
|
|
$0.92
|
|
|
$0.571
|
|
|
$0.371
|
|
|
$0.285
|
|
|
$0.238
|
|
|
Ver
|
|
|
$0.257
|
|
|
$0.209
|
|
|
$0.203
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-2x2-6
|
N-Channel
|
1 Channel
|
30 V
|
6 A
|
40 mOhms
|
- 20 V, 20 V
|
1 V
|
3.6 nC
|
- 55 C
|
+ 150 C
|
2.4 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 18A Mosfet PowerFLAT STripFET V
- STL70N4LLF5
- STMicroelectronics
-
1:
$1.94
-
4,461En existencias
|
N.º de artículo de Mouser
511-STL70N4LLF5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 18A Mosfet PowerFLAT STripFET V
|
|
4,461En existencias
|
|
|
$1.94
|
|
|
$1.24
|
|
|
$0.836
|
|
|
$0.663
|
|
|
$0.608
|
|
|
$0.578
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
18 A
|
6.1 mOhms
|
- 22 V, 22 V
|
1 V
|
13 nC
|
- 55 C
|
+ 175 C
|
72 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3
- STL7N10F7
- STMicroelectronics
-
1:
$1.52
-
4,033En existencias
|
N.º de artículo de Mouser
511-STL7N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3
|
|
4,033En existencias
|
|
|
$1.52
|
|
|
$0.911
|
|
|
$0.639
|
|
|
$0.501
|
|
|
$0.457
|
|
|
$0.41
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
100 V
|
7 A
|
35 mOhms
|
- 20 V, 20 V
|
4.5 V
|
14 nC
|
- 55 C
|
+ 150 C
|
2.9 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 1.00 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a SOT223-2 packa
- STN6N60M2
- STMicroelectronics
-
1:
$1.00
-
7,979En existencias
|
N.º de artículo de Mouser
511-STN6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 1.00 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a SOT223-2 packa
|
|
7,979En existencias
|
|
|
$1.00
|
|
|
$0.605
|
|
|
$0.406
|
|
|
$0.313
|
|
|
Ver
|
|
|
$0.229
|
|
|
$0.283
|
|
|
$0.258
|
|
|
$0.229
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
600 V
|
5.5 A
|
1.2 Ohms
|
- 25 V, 25 V
|
4 V
|
6.2 nC
|
- 55 C
|
+ 150 C
|
6 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 10.5A Zener SuperMESH
- STP12NK80Z
- STMicroelectronics
-
1:
$4.59
-
1,259En existencias
|
N.º de artículo de Mouser
511-STP12NK80Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 10.5A Zener SuperMESH
|
|
1,259En existencias
|
|
|
$4.59
|
|
|
$2.44
|
|
|
$2.13
|
|
|
$1.92
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
10.5 A
|
750 mOhms
|
- 30 V, 30 V
|
|
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
- STP140N6F7
- STMicroelectronics
-
1:
$2.65
-
6,632En existencias
|
N.º de artículo de Mouser
511-STP140N6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
|
|
6,632En existencias
|
|
|
$2.65
|
|
|
$1.29
|
|
|
$1.16
|
|
|
$0.967
|
|
|
$0.909
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
80 A
|
3 mOhms
|
- 20 V, 20 V
|
2 V
|
40 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
|
STripFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
- STP25N80K5
- STMicroelectronics
-
1:
$5.09
-
718En existencias
|
N.º de artículo de Mouser
511-STP25N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
|
|
718En existencias
|
|
|
$5.09
|
|
|
$2.87
|
|
|
$2.62
|
|
|
$2.37
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
19.5 A
|
260 mOhms
|
- 30 V, 30 V
|
4 V
|
40 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0 120 Ohm typ 24 A
- STP28NM60ND
- STMicroelectronics
-
1:
$5.97
-
990En existencias
|
N.º de artículo de Mouser
511-STP28NM60ND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0 120 Ohm typ 24 A
|
|
990En existencias
|
|
|
$5.97
|
|
|
$3.10
|
|
|
$2.91
|
|
|
$2.65
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
23 A
|
150 mOhms
|
- 25 V, 25 V
|
4 V
|
62.5 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
- STP36N60M6
- STMicroelectronics
-
1:
$5.93
-
976En existencias
|
N.º de artículo de Mouser
511-STP36N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
976En existencias
|
|
|
$5.93
|
|
|
$3.42
|
|
|
$3.20
|
|
|
$2.93
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
85 mOhms
|
- 25 V, 25 V
|
3.25 V
|
44.3 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 8.0 A Zener SuperMESH
- STP9NK90Z
- STMicroelectronics
-
1:
$5.01
-
1,885En existencias
|
N.º de artículo de Mouser
511-STP9NK90Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 8.0 A Zener SuperMESH
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1,885En existencias
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$5.01
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$2.20
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$2.10
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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900 V
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8 A
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1.3 Ohms
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- 30 V, 30 V
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3 V
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72 nC
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- 55 C
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+ 150 C
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160 W
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Enhancement
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SuperMESH
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in an IPAK package
- STU2N105K5
- STMicroelectronics
-
1:
$2.13
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5,873En existencias
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N.º de artículo de Mouser
511-STU2N105K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in an IPAK package
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5,873En existencias
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$2.13
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$0.979
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$0.884
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$0.802
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-251-3
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N-Channel
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1 Channel
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1.05 kV
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1.5 A
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8 Ohms
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- 30 V, 30 V
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3 V
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10 nC
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- 55 C
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+ 150 C
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60 W
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Enhancement
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 1000 Volt 13A Zener SuperMESH
- STW13NK100Z
- STMicroelectronics
-
1:
$12.19
-
681En existencias
|
N.º de artículo de Mouser
511-STW13NK100Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 1000 Volt 13A Zener SuperMESH
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681En existencias
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$12.19
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$7.37
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$6.85
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Min.: 1
Mult.: 1
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Si
|
Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1 kV
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13 A
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700 mOhms
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- 30 V, 30 V
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3 V
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190 nC
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- 55 C
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+ 150 C
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350 W
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Enhancement
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SuperMESH
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 packag
- STW40N95DK5
- STMicroelectronics
-
1:
$15.28
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692En existencias
|
N.º de artículo de Mouser
511-STW40N95DK5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 packag
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692En existencias
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$15.28
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$9.36
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$9.13
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Min.: 1
Mult.: 1
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Si
|
Through Hole
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TO-247-3
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N-Channel
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1 Channel
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950 V
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38 A
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120 mOhms
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- 30 V, 30 V
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3 V
|
100 nC
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- 55 C
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+ 150 C
|
450 W
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Enhancement
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.055 Ohm 39A Mdmesh II
- STW48NM60N
- STMicroelectronics
-
1:
$9.25
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1,042En existencias
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N.º de artículo de Mouser
511-STW48NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.055 Ohm 39A Mdmesh II
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1,042En existencias
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$9.25
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$5.43
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$4.70
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Min.: 1
Mult.: 1
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Si
|
Through Hole
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TO-247-3
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N-Channel
|
1 Channel
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600 V
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39 A
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70 mOhms
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- 25 V, 25 V
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2 V
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124 nC
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- 55 C
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+ 150 C
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255 W
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Enhancement
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.056 Ohm 42 A MDmesh M5
- STW57N65M5
- STMicroelectronics
-
1:
$10.46
-
496En existencias
|
N.º de artículo de Mouser
511-STW57N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.056 Ohm 42 A MDmesh M5
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496En existencias
|
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$10.46
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$6.71
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$5.43
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$5.42
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Min.: 1
Mult.: 1
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Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
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650 V
|
42 A
|
63 mOhms
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- 25 V, 25 V
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3 V
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98 nC
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- 55 C
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+ 150 C
|
250 W
|
Enhancement
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.031Ohm typ. 68A MDmesh M2
- STW70N60M2
- STMicroelectronics
-
1:
$9.64
-
613En existencias
|
N.º de artículo de Mouser
511-STW70N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.031Ohm typ. 68A MDmesh M2
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613En existencias
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$9.64
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$5.68
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$5.07
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Min.: 1
Mult.: 1
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Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
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600 V
|
68 A
|
30 mOhms
|
- 25 V, 25 V
|
3 V
|
118 nC
|
- 55 C
|
+ 150 C
|
450 W
|
Enhancement
|
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MDmesh
|
Tube
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