Nexperia BSH205G2 20V P-Channel Trench MOSFET
Nexperia BSH205G2 20V P-Channel Trench MOSFET is an enhancement mode field-effect transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The device employs Trench MOSFET technology and offers a low threshold voltage with very fast switching. The BSH205G2 MOSFET is ideal for applications like relay drivers, high-speed line drivers and switching circuits.
The Nexperia BSH205G2 20V P-Channel Trench MOSFET is AEC-Q101 qualified and suitable for use in automotive applications.
Features
- AEC-Q101 qualified
- Enhanced power dissipation capability of 890mW
- Trench MOSFET technology
- Low on-state resistance
- Low threshold voltage
- -55°C to 150°C ambient temperature range
- SOT23 (TO-236AB) package
Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
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Publicado: 2015-03-10
| Actualizado: 2022-11-28