Nuevos MOSFETs de SiC
Littelfuse IXSJxN120R1 1200V Silicon Carbide (SiC) Power MOSFETs are high-performance devices designed for demanding power conversion applications. The Littelfuse IXSJxN120R1 MOSFETs leverage the superior properties of SiC technology to deliver low switching losses, high efficiency, and excellent thermal performance. The IXSJ25N120R1 offers a typical RDS(on) of 80mΩ and is optimized for lower current applications, while the IXSJ43N120R1 and IXSJ80N120R1 provide lower on-resistance values of 45mΩ and 20mΩ, respectively, supporting higher current handling capabilities. All three devices feature fast switching speeds, robust avalanche capability, and a Kelvin source pin for improved gate drive control. These characteristics make the IXSJxN120R1 series ideal for use in electric vehicle inverters, solar inverters, industrial motor drives, and high-efficiency power supplies.
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Littelfuse MOSFET de potencia SiC de 1200 V IXSJxN120R1High-performance devices designed for demanding power conversion applications.6/23/2025
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Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETsAutomotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.6/3/2025 -
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFETFeatures a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.5/22/2025 -
APC-E Silicon Carbide (SiC) MOSFETsDelivers high power, high frequency, and unmatched performance for demanding applications.5/6/2025 -
Wolfspeed 1700V Silicon Carbide MOSFETsOffers higher switching, system efficiency, and power density for next-generation power conversion.4/17/2025 -
IXYS MOSFET SiC IXSA40N120L2-7Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.3/6/2025 -
IXYS MOSFET SiC IXSA80N120L2-7Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.3/6/2025 -
onsemi NVH4L050N170M1 Silicon Carbide (SiC) MOSFETsDeliver exceptional performance with a typical RDS(on) of 53mΩ at VGS = 20V.2/20/2025 -
onsemi NTBL032N065M3S Silicon Carbide (SiC) MOSFETsDesigned for fast switching applications, offering reliable performance.2/20/2025 -
Central Semiconductor CDMS24783-120 N-Channel SiC MOSFETOffers a 1200V drain-source voltage for high-speed switching and fast reverse recovery applications2/18/2025 -
IXYS MOSFET SiC IXSH40N120L2KHV1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.2/18/2025 -
IXYS MOSFET SiC IXSH80N120L2KHV1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.2/18/2025 -
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETsIdeal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.9/6/2024 -
Navitas Semiconductor Gen-3 Fast (G3F) SiC MOSFETsDeveloped using a proprietary trench-assisted planar technology for high-speed performance.9/3/2024 -
Navitas Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETsEnable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs).9/3/2024 -
Micro Commercial Components (MCC) MOSFET de carburo de silicio (SiC) SICWxMOSFET de SiC de 650 V con capacidad de conmutación de alta velocidad, que se incluyen en paquete TO-247.9/3/2024 -
Micro Commercial Components (MCC) MOSFET de canal N SiC de 1200 V SICW0xAmplifican el rendimiento en paquetes versátiles TO-247-4, TO-247-4L y TO-247AB.9/3/2024 -
Infineon Technologies CoolSiC™ 400V G2 Silicon Carbide MOSFETsSpecially developed for use in the AC/DC stage of AI server PSUs and solar/energy storage systems.8/28/2024 -
Vishay MXP120A MaxSiC™ 1200V N-Channel MOSFETsFeature fast switching speed, 3μs short circuit withstand time, and 139W maximum power dissipation.8/26/2024 -
onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFETOffers an M3S planar technology for fast-switching applications in a D2PAK-7L package.8/14/2024 -
onsemi NTH4L018N075SC1 N-Channel SiC MOSFETLow ON resistance, 750V M2 EliteSiC MOSFET available in a compact TO247-4L package.8/14/2024 -
onsemi NTH4L023N065M3S SiC MOSFETOffers a 650V blocking voltage rating, 153pF output capacitance, and a TO-247-4L package.8/6/2024 -
Micro Commercial Components (MCC) DC Fast Charging SolutionsSupports EVs with high-performance components designed for speed, safety, and system efficiency.8/1/2024 -
Diotec Semiconductor DIF065SIC0x0 Silicon Carbide (SiC) MOSFETsOffers fast switching times and reduced noise levels in a SiC-wide bandgap material.7/26/2024 -
Wolfspeed MOSFET de potencia de SiC de 1,200 V y bajo perfil TO-247-4Ofrecen alta eficiencia del sistema, reducen las pérdidas de conmutación y minimizan el retardo de puerta.7/3/2024